Shipley Company LLC

Rohm & Haas Electronic Materials LLC

International Business Machines Corporation

Other

Cornell University

Rohm and Haas Electronics Materials LLC

George G Barclay

Deyan Wang

Cheng-Bai Xu

Wang Yueh

Chunyi Wu

Peter Trefonas, Iii

Stefan J Caporale

Zhibiao Mao

Charles R Szmanda

Subbareddy Kanagasabapathy

Robert D Mikkola

Robert J Kavanagh

Joseph Mattia

James F Cameron

Cong Liu

Gerhard Pohlers

Gary N Taylor

James W Thackeray

Hiroshi Ito

Gary Ganghui Teng

Anthony Zampini

Ashish A Pandya

Christopher Kemper Ober

Roger F Sinta

Suzanne M Coley

Timothy G Adams

Edward K Pavelchek

Manuel doCanto

Ronald Anthony DellaGuardia

Dana A Gronbeck

Matthew A King

Michael F Cronin

Nick Pugliano

Greg Breyta

Konstantinos I Papathomas

Mingqi Li

Emad Aqad

David W Wang

Young Cheol Bae

Jin Wuk Sung

Jacque H Georger, Jr

Li Jia

Doris H Kang

Mark D Denison

Sheri L Ablaza

Nicola Pugliano

Martha M Rajaratnam

Leo L Linehan

Dong Won Chung

Yoshihiro Yamamoto

Thomas A Estelle

Cheng Han Wu

Kenneth J Spizuoco

Patrick J Bolton

Kao Xiong

Thomas Mates

Hwan-Kyu Kim

Ronald A Dellaguardia

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising sulfonamide material and processes for photolithography

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises one or more materials that have hetero-substituted carbocyclic aryl groups. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions comprising hetero-substituted carbocyclic aryl component and processes for photolithography

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprises two or more distinct materials that can be substantially non-mixable with a resin component of the resist. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Compositions and processes for immersion lithography

New lithographic processing methods are provided which are particularly useful in immersion lithography schemes. In one aspect, processes of the invention comprise: applying on a substrate a photoresist composition; exposing the photoresist layer to radiation activating for the photoresist composition; removing a portion but not all of the exposed photoresist layer; and developing the treated photoresist layer to provide a photoresist relief image.

Processes for photolithography

New photoresist compositions are provided that are useful for immersion lithography. In one preferred aspect, photoresist composition are provided that comprise: (i) one or more resins that comprise photoacid-labile groups, (ii) a photoactive component, and (iii) one or more materials that comprise photoacid labile groups and that are distinct from the one or more resins; wherein the deprotection activation energy of photoacid-labile groups of the one or more materials is about the same as or lower than the deprotection activation energy of photoacid-labile groups of the one or more resins. In another preferred aspect, photoresist compositions are provided that comprise (i) one or more resins, (ii) a photoactive component, and (iii) one or more materials that comprise a sufficient amount of acidic groups to provide a dark field dissolution rate of at least one angstrom per second.

Compositions and processes for photolithography

New methods are provided for synthesis of photoacid generator compounds ('PAGs'), new photoacid generator compounds and photoresist compositions that comprise such PAG compounds. In a particular aspect, sulfonium-containing (S+) photoacid generators and methods of synthesis of sulfonium photoacid generators are provided.

Photoacid generators and photoresists comprising same

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials having a water contact angle that can be changed by treatment with base and/or one or more materials that comprise fluorinated photoacid-labile groups and/or one or more materials that comprise acidic groups spaced from a polymer backbone. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

Provided are methods of forming an ion implanted region in a semiconductor device. The methods comprise: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, wherein the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having acid labile groups, a photoacid generator and a solvent; (c) coating a descumming composition over the photoresist pattern, wherein the descumming composition comprises: a matrix polymer; an acid generator chosen from thermal acid generators, photoacid generators and combinations thereof; and a solvent; (d) exposing the coated semiconductor substrate to conditions to generate an acid in the descumming composition from the acid generator; (e) contacting the coated semiconductor substrate with a rinsing agent to remove residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. The methods find particular applicability in the manufacture of semiconductor devices.

Ion implantation methods

A polymer includes the polymerized product of monomers including a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a, L, LN, R, R, R, and X are defined herein. The polymer is a useful component of a photoresist composition.

Photoresist and coated substrate comprising same

New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more block copolymers. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer dining immersion lithography processing.

Compositions comprising carboxy component and processes for photolithography

A polymer comprises the polymerized product of monomers comprising a nitrogen-containing monomer comprising formula (Ia), formula (Ib), or a combination of formulas (Ia) and (Ib), and an acid-deprotectable monomer having the formula (II): wherein a is 0 or 1, each Ris independently H, F, Calkyl, or Cfluoroalkyl, Lis a straight chain or branched Calkylene group, or a monocyclic, polycyclic, or fused polycyclic Ccycloalkylene group, each Ris independently H, Calkyl, Ccycloalkyl, Cheterocycloalkyl, an aliphatic Coxycarbonyl, or a Cacyl group optionally including a heteroatom substituent group, where each Ris separate or at least one Ris attached to an adjacent R; LN is a nitrogen-containing monocyclic, polycyclic, or fused polycyclic Cheterocycloalkylene group, and X is H, Calkyl, aliphatic Coxycarbonyl, or a Cacyl group optionally including a heteroatom substituent group; and each Ris independently Calkyl, Ccycloalkyl, or Cheterocycloalkyl, wherein each Ris separate or at least one Ris attached to an adjacent R.

Surface active additive and photoresist composition comprising same

Leveling agents for metal plating baths are provided. Plating baths containing such leveling agents provide metal deposits having substantially level surfaces. Such leveling agents may be selected to selectively incorporate desired levels of impurities into the metal deposit.

Leveler compounds

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Jefferson, MA, United States of America

George G Barclay