Bell Telephone Laboratories

Burroughs, Inc.

George Elwood Smith

Harold Seidel

Harry John Leamy

Michael F Tompsett

Lionel C Kimerling

George Marr

Robert Joseph Strain

Edward H Nicollian

A Charge Coupled Device (CCD) structure employing two levels of electrode metallization. The field plate electrodes are arranged in pairs with the second one of each pair partially overlapping and insulated from the first one of its pair and the first one of the next pair. The structure can be operated two-phase or four-phase with four electrodes per bit and three-phase with three electrodes per bit by providing suitable amounts of electrode overlap and suitable drive circuitry. A particularly advantageous mode of two-phase operation with four electrodes per bit is enabled by providing asymmetrical overlapping of electrodes, the second electrode of each pair overlapping the first electrode of its pair more than the first electrode of the next pair.

Method of fabricating polysilicon electrodes

Disclosed is a feedback regulated oscillator which comprises a reference signal source, a variable local oscillator, a converter responsive to the variable local oscillator for developing a signal, compatible with the signal of the reference source, having a magnitude which is responsive to the frequency of the local oscillator, and a comparator, responsive to the reference signal source and to the converter, for controlling the frequency of the variable local oscillator.

Precision frequency source using integrated circuit elements

The rate at which radiation defects in semi-conductors are annealed is enhanced by various electronic mechanisms. These effects can be used to program device arrays in which all devices are initially damaged, then selected devices are activated by addressing them electrically through the individual device contacts.

Healing radiation defects in semiconductors

Charge transfer devices are adapted to provide all possible forms of combinational logic functions by using combinations and variations of a basic state inversion-bit regeneration element. This basic element employs electrically floating means in the vicinity of a charge transfer device to sense the presence or absence of charge therein and to control the transfer of a newly-generated amount of charge away from an independent source.

Charge transfer logic apparatus

An analog electrical signal is converted into a binary digital signal by means of an arrangement of semiconductor surface potential wells. During operation, this arrangement converts the analog electrical signal into an analog signal charge packet in one of these potential wells and sequentially subtracts from this analog packet a sequence of reference charge packets representing the binary digital bits of the analog signal, provided that the then remaining signal charge packet is greater than the reference charge packet.

Semiconductor apparatus for analog to digital conversion

An extremely short channel Field Effect Transistor (FET) is made by making a first ion implant through a polysilicon mask aperture, converting the surface of the polysilicon into SiO.sub.2 to constrict the aperture size and then making a second ion implant of the opposite type impurity through the constricted aperture. The SiO.sub.2 growth effectively moves the edge of the mask by a small controlled distance. This permits a small controlled spacing between the two ion implants, which is used for defining an extremely short FET channel. Alternatively, a bipolar transistor with a narrow base zone can be made by analogous processing.

Method for making transistor structures

In one embodiment, an extremely short channel FET is made by forming a metal layer over a wafer, depositing silicon dioxide over part of the metal layer, oxidizing the exposed metal, controllably etching a portion of the silicon dioxide to expose a small strip of the nonoxidized metal layer, electroplating the exposed metal strip, thereby to form an extremely narrow gate electrode, removing the deposited SiO.sub.2, the metal oxide and the remaining metal layer to leave only the gate electrode, and using the gate electrode as a mask for ion implanting source and drain regions. Since the gate electrode can be made so narrow, the channel region is correspondingly short to give extremely high frequency capabilities. Other embodiments are also described.

Growing community of inventors

Murray Hill, NJ, United States of America

George Elwood Smith