Lucent Technologies Inc.

At&t Bell Laboratories

American Telephone & Telegraph Co., At&t Bell Laboratories

George E Georgiou

Young-Kai Chen

Steven J Hillenius

Joze Bevk

Martin E Poulsen

Matthias Werner Fuertsch

Gary N Poli

A low noise transistor IC or module comprises a plurality of conventional CMOS transistors which are laid out in parallel in such a way that the effective gate width of the combination of transistors is increased, yet the effective gate resistance and hence the noise figure (NF) of the circuit are reduced. A low noise amplifier incorporating such a module is also described.

Low noise transistor module and amplifier

The invention is directed to a process for forming p.sup.+ and n.sup.+ gates on a single substrate. A polycrystalline silicon or amorphous silicon layer is formed on a substrate with n-type and p-type regions formed therein and with a layer of silicon dioxide formed thereover and the structure is subjected to a low temperature anneal. A layer of metal silicide is then formed over the structure and n-type and p-type dopants are implanted into the resulting structure. A nitrogen implant is performed after the n-type dopant is implanted into the structure. The nitrogen implant reduces the amount to which the p-type dopant diffuses through the silicide layer and into the n.sup.+ gates. A dielectric material is then formed over the structure and patterned, after which the structure is subjected to additional processing steps to form gate stacks over the n-regions and the p-regions of the substrate.

Process for fabricating a device using nitrogen implantation into

Selective electroless plating of cobalt or nickel is utilized to form conductive plugs in high-aspect-ratio vias in VLSI devices. Particularly good results are obtained when an active or catalytic film is formed on the via bottoms to serve as a plating base.

Selective electroless plating of vias in VLSI devices

An improved X-ray source for a lithographic system comprises a double-angle conical target. The target is characterized by a small apparent source diameter and an efficient cooling system. Submicron resolution and high-power operation are thereby made feasible.

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Gillette, NJ, United States of America

George E Georgiou