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Advanced Technology Materials, Inc.

George E Emond

Peter C Van Buskirk

Michael W Russell

Jonathan Wolk

A chemical mechanical polishing (CMP) slurry composition for removing noble metal material from a substrate having the noble metal material deposited thereon, for example, a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. Such polishing slurry composition contains abrasive polishing particles, a bromide compound, a bromate compound for providing free bromine as an oxidizing agent in the composition, and an organic acid for mediating decomposition of the bromate compound in the composition. The CMP slurry composition of the invention is particularly effective for planarization and/or removal of noble metal(s) from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.

Chemical mechanical polishing compositions for CMP removal of iridium thin films

A method of removing noble metal material from a substrate having the noble metal material deposited thereon, such as a semiconductor device structure including thereon a layer of the noble metal material, e.g., iridium, patterned for use as an electrode. The substrate is subjected to chemical mechanical polishing with a chemical mechanical polishing composition containing abrasive polishing particles and a halide-based oxidizing agent. The CMP composition and method of the invention provide efficient planarization and noble metal material removal from the substrate, in applications such as the fabrication of ferroelectric or high permittivity capacitor devices.

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Southington, CT, United States of America

George E Emond