Zyvex Corporation

Drs Network & Imaging Systems, LLC

Apple Inc.

Zyvex Labs, LLC

University of Colorado

Drs Rsta, Inc.

Drs Sensors & Targeting Systems, Inc.

Zyvex Instruments, LLC

Zynex Corporation

George Dee Skidmore

Matthew D Ellis

Eric G Parker

David I Simon

Robert J Chen

Miikka M Kangas

Michael J Bishop

Robert J Folaron

Aaron Geisberger

John Neal Randall

Steven McClellan George

Victor M Bright

Harold L Sontag

Kirk D Peterson

Joseph J Brown

Richard L Southerland

Christof Baur

Richard E Stallcup

Eugene E Krueger

Daniel B Jardine

Nathan Thomas Eigenfeld

Jingping Peng

Jun-Fu Liu

Cari A Ossenfort

Gregory A Magel

Ralph C Merkle

Henry William Neal

Charles L Goldsmith

Charles G Roberts

Samuel E Ivey

Jeff R Emmett

Kenneth Tsui

Christopher Howard

Kenneth Bray

Harold L Sontag, Iii

Jeong Bong Lee

Steven J Marteney

Erik Alfonso Nilsen

Kimberly Tuck

Xiaojun Huang

Jason M Gray

Arun Kumar Nallani

Kabseog Kim

Jonas Gertsch

Kristina F Jeppson

Christopher G Howard

The present invention relates to the unexpected discovery of novel methods of preparing nanodevices and/or microdevices with predetermined patterns. In one aspect, the methods of the invention allow for engineering structures and films with continuous thickness equal to or less than 50 nm.

Atomic layer etching on microdevices and nanodevices

This relates to sensor systems, detectors, imagers, and readout integrated circuits (ROICs) configured to selectively detect one or more frequencies or polarizations of light, capable of operating with a wide dynamic range, or any combination thereof. In some examples, the detector can include one or more light absorbers; the patterns and/or properties of a light absorber can be configured based on the desired measurement wavelength range and/or polarization direction. In some examples, the detector can comprise a plurality of at least partially overlapping light absorbers for enhanced dynamic range detection. In some examples, the detector can be capable of electrostatic tuning for one or more flux levels by varying the response time or sensitivity to account for various flux levels. In some examples, the ROIC can be capable of dynamically adjusting at least one of the frame rate integrating capacitance, and power of the illumination source.

Polarization selective, frequency selective, and wide dynamic range detectors, imaging arrays, readout integrated circuits, and sensor systems

A method of performing non-uniformity correction for an imaging system includes receiving image data from a detector. The method also includes retrieving stored correction coefficients from the memory. The method also includes retrieving a stored factory calibration reference frame. The method also includes acquiring an operational calibration reference frame. The method also includes computing updated correction coefficients based on the stored correction coefficients, the stored factory calibration reference frame, and the operational calibration reference frame. The method also includes computing the non-uniformity correction based on the updated correction coefficients. The method also includes forming a corrected image by applying the non-uniformity correction to the image data. The method further includes outputting the corrected image.

Error smoothing through global source non-uniformity correction

Methods and structures of photodetectors are described. The structure may include a readout integrated circuit substrate having an internally integrated capacitor. The structure may additionally include an external capacitor overlying the readout integrated circuit substrate. The external capacitor may be coupled with the internally integrated capacitor of the readout integrated circuit substrate, and configured to operate in parallel with the internally integrated capacitor of the readout integrated circuit substrate. The structure may also include a detector overlying the external capacitor.

High density capacitor integrated into focal plane array processing flow

An apparatus includes a detector that measures radiation. The apparatus also includes a window that is relationally coupled to the detector and a shield, so that the window is in between the detector and the shield. The apparatus further includes the shield that emits substantially constant radiation, and substantially blocks radiation from a camera housing at least partially surrounding the shield, so that the detector measures radiation passing through an optical system and the shield.

Integrated radiation shield and radiation stop

The present invention relates to novel nano- and micro-electromechanical devices and novel methods of preparing them. In one aspect, the invention includes methods of preparing a nanodevice. In certain embodiments, the methods comprise coating a polymer layer with a first at least one thin solid material layer using atomic layer deposition (ALD), thus forming an ALD-generated layer. In other embodiments, the methods comprise patterning the first at least one thin solid material layer to form a nanodevice. In yet other embodiments, the methods comprise releasing the nanodevice from the polymer layer.

Methods of preparing nanodevices

A patterned layer is formed by removing nanoscale passivating particle from a first plurality of nanoscale structural particles or by adding nanoscale passivating particles to the first plurality of nanoscale structural particles. Each of a second plurality of nanoscale structural particles is deposited on each of corresponding ones of the first plurality of nanoscale structural particles that is not passivated by one of the plurality of nanoscale passivating particles.

Patterned atomic layer epitaxy

A pixel structure for use in an infrared imager is provided. The pixel structure includes a substrate and a bolometer. The bolometer includes a transducer that has a spaced apart relationship with respect to the substrate and has an electrical resistance that varies in response to changes in the temperature of the transducer. The bolometer also includes an absorber that has a spaced apart relationship with respect to the transducer and has a thermal connection to the transducer permitting radiation absorbed by the absorber to heat the transducer. The absorber has a top side defining a recess or channel in the absorber. The recess or channel is adapted to effect the propagation path of a portion of radiation received by the absorber such that the radiation portion is absorbed by the absorber rather than exiting the absorber. The recess or channel also decreases the thermal mass of the bolometer.

Pixel structure having an umbrella type absorber with one or more recesses or channels sized to increase radiation absorption

A system and method are disclosed which enable post-fabrication reduction of minimum feature size spacing of microcomponents. A method for producing an assembly of microcomponents is provided, in which at least two microcomponents are fabricated having a separation space therebetween. At least one of the microcomponents includes an extension part that is operable to reduce the separation space. Such an extension part may include an extension member that is movably extendable away from its associated microcomponent to reduce the separation space between its associated microcomponent and another microcomponent. The extension part may be latched at a desired position by a latching mechanism. The extension part may be implemented such that the extension member eliminates the separation space, thereby resulting in such extension member engaging another microcomponent. Such engagement may be achieved without requiring power to be applied to the microcomponents. Certain embodiments are insensitive to etching inaccuracy encountered during fabrication.

System and method for post-fabrication reduction of minimum feature size spacing of microcomponents

A method including, in one embodiment, severing a sample at least partially from a substrate by cutting the substrate with a focused ion beam (FIB), capturing the substrate sample by activating a grasping element, and separating the captured sample from the substrate. The captured sample may be separated from the substrate and transported to an electron microscope for examination.

Method, system and device for microscopic examination employing fib-prepared sample grasping element

Fabricating electrical isolation properties into a MEMS device is described. One embodiment comprises a main substrate layer of a high-resistivity semiconductor material, such as high-resistivity silicon. The high-resistivity substrate is then controllably doped to provide a region of high-conductivity in the main substrate. Electrical isolation is achieved in such an embodiment by patterning the high-conductivity region either by masking the main substrate during the doping or etching through the doped, high-conductivity region in order to form regions of high conductivity. Effective isolation results from confinement of electrical currents to the lowest-resistance path. An alternative embodiment employs the fabrication of pn junctions and the use of reverse biasing to enhance the electrical isolation. A further embodiment comprises a main substrate layer of low-resistivity semiconductor material with a layer of insulator deposited thereon. High-conductivity or low-resistivity material is then grown on top of the insulator to create electrically isolated conductors.

Apparatus and fabrication methods for incorporating sub-millimeter, high-resistivity mechanical components with low-resistivity conductors while maintaining electrical isolation therebetween

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Richardson, TX, United States of America

George Dee Skidmore