International Business Machines Corporation

George Czornyj

Ananda H Kumar

Heinz O Steimel

Mark A Takacs

Steven M Kandetzke

Richard A Bates

Kenneth Chang

Arnold I Baise

John Ulrich Knickerbocker

Jon Alfred Casey

Willi Volksen

Charles Hampton Perry

Sarah Huffsmith Knickerbocker

James N Humenik

Lawrence D David

Srinivasa S Reddy

Robert W Nufer

Ajay Prabhakar Giri

Anthony W Wu

John Acocella

Renuka S Divakaruni

Anthony Mastreani

Peter A Agostino

David R Clarke

Daniel P Kirby

Lovell B Wiggins

Liang-Choo Hsia

Dominic Changwon Yang

Salvatore J Scilla

Moonhor Ree

Amy T Matts

Werner E Dunkel

Allen J Dam

Ray M Bryant

Mukta S Farooq

Arthur Bross

Constance J Araps

Umar M Ahmad

Rao R Tummala

Nunzio DiPaolo

Nanik Bakhru

Marvin S Pitler

Suryanarayana Mukkavilli

Harry K Harrison

Richard R Jones

Jerome D Swalen

New photosensitive polyamic acid precursors are disclosed which have the formula: ##STR1## where Z is a tetravalent organic radical which contains at least one aromatic ring, Z' is a divalent organic radical which contains at least one aromatic ring, and R* is a photo polymerizable group. Particularly preferred compounds include BPDA-PDA and BPDA-ODA polyamic acid precursors. The precursor compositions within the practice of this invention are i-line, g-line, and i-/g-line active and show good photoresolution. The films formed exhibit excellent self-adhesion and adhesion to glass ceramic and silicon wafer substrates have low internal stress, a very low degree of solvent swelling, high thermal stability, and excellent mechanical properties such as high modulus/tensile strength and high elongation at break.

Photosensitive polyimide precursors

New photosensitive polyamic acid precursors are disclosed which have the formula: ##STR1## where Z is a tetravalent organic radical which contains at least one aromatic ring, Z' is a divalent organic radical which contains at least one aromatic ring, and R* is a photosensitive group. Particularly preferred compounds include BPDA-PDA and BPDA-ODA polyamic acid precursors. The precursor compositions within the practice of this invention are i-line, g-line, and i-/g-line active and show good photoresolution. The films formed exhibit excellent self-adhesion and adhesion to glass ceramic and silicon wafer substrates have low internal stress, a very low degree of solvent swelling, high thermal stability, and excellent mechanical properties such as high modulus/tensile strength and high elongation at break.

A high density array of pinless electrical, spring connectors are supported in an electrically insulative carrier. The carrier has an array of cavity nests for receiving the spring connectors, locking them into a stable position and functioning as an electrical coupler between corresponding electrical contact pads in stacked modules.

Array of pinless connectors and a carrier therefor

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addressed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Process for fabricating a low dielectric composite substrate

A method of making a multilayer thin film structure on the surface of a dielectric substrate which includes the steps of:

Method of making a multilayer thin film structure

The present invention provides a packaging semiconductor structure and method for obtaining same. The structure is comprised of at least one level of dielectric and metallurgy layers. The at least one level is comprised of a wiring metallurgy plane and a 'through-via' plane of interconnecting metallurgy in association with both one and two layers of polymeric dielectric materials. The self-alignment method of fabrication of the level provides a streamlined technique wherein stringent masking and alignment requirements are relaxed, undue processing such as at least one polishing step is eliminated and a structure having adhesive integrity is fabricated.

Layer thin film wiring process featuring self-alignment of vias

Disclosed is a ceramic substrate having a protective coating on at least one surface thereof which includes:

Ceramic substrate having a protective coating thereon and a method for

The cracking experienced during thermal cycling of metal:dielectric semiconductor packages results from a mismatch in thermal co-efficients of expansion. The non-hermeticity associated with such cracking can be addresssed by backfilling the permeable cracks with a flexible material. Uniform gaps between the metal and dielectric materials can similarly be filled with flexible materials to provide stress relief, bulk compressibility and strength to the package. Furthermore, a permeable, skeletal dielectric can be fabricated as a fired, multilayer structure having sintered metallurgy and subsequently infused with a flexible, temperature-stable material to provide hermeticity and strength.

Multi layer thin film wiring process featuring self-alignment of vias

The photosensitivity of a particular group of polymerizable oligomers permits radiation induced polymerization. This photosensitivity thus enables the polymerizable oligomers to be used as photoresists in general, and facilitates in situ cure when the oligomers are used to produce isolation films and trenches in semiconductor devices. The photosensitivity further enables use of a simplified planarization process when the polymerizable oligomers are used in the fabrication of semiconductor structures and integrated circuit components. Specifically, the polymerizable oligomers are comprised of poly N-substituted amic acids, the corresponding amic esters, the corresponding amic isoimides, the corresponding amic imids or mixtures thereof, wherein the end groups of the polymerizable oligomer are end capped with a vinyl or acetylinic end group.

Use of radiation sensitive polymerizable oligomers to produce polyimide

A protective coating is formed on an integrated circuit device by coating the device with a solution of acetylene terminated, branched polyphenylene prepolymer material and heating the material to form a thermoset crosslinked polymer layer. Selectively patterned portions may be provided when, after the coating step and prior to the heating step, the steps of imagewise exposure to radiation and rinsing with an organic solvent are carried out.

Acetylene terminated, branched polyphenylene resist and protective

A substrate surface is lubricated or passivated by applying thereto a monomolecular layer of a compound having the formula ##STR1## wherein n is 6 to 20, each of m and L is 6 to 10, X is --CH.dbd.CH--or --C.tbd.C--, and M is a divalent cation, and polymerizing said layer in situ.

Preparation of polymer monomolecular films

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Poughkeepsie, NY, United States of America

George Czornyj