Motorola Corporation

George B Norris

Robert Bruce Davies

Joseph Staudinger

John M Golio

Lawrence S Klingbeil, Jr

Fred H Bonn

Gary W Sadowniczak

Charles B Anderson

A field effect transistor structure which can serve as a low noise amplifier. The field effect transistor has a major surface and source and drain regions extending from the major surface into a body of semiconductor material. A channel region is formed in a portion of the body of semiconductor material separating the source and drain regions. The channel region has a first boundary perpendicular to the major and contiguous with the source region, a second boundary parallel to the first boundary and contiguous with the drain region, a third boundary perpendicular to the first boundary, and a fourth boundary parallel to the channel region. A first portion of the channel region is enclosed by a first border parallel to the first boundary of the channel region, a second border parallel to the second boundary of the channel region, a third boundary of the channel region, and the fourth boundary of the channel region. A non-conductive section is formed in the body of semiconductor material extending from the major surface and enclosed by a first edge coinciding with the first border of the first portion of the channel region, a second edged coinciding with the second border of the first portion of the channel region, a third edge parallel to the third boundary of the channel region, and a fourth edge parallel to the fourth boundary of the channel region. A gate structure is formed above the first portion of the channel region.

Field effect transistor

A method and amplifier circuit (20) for conditioning a signal. The amplifier circuit (20) includes a field effect transistor (22) having a sub-harmonic termination (21) connected to a drain of the field effect transistor (22). In addition, an output impedance termination (24) is connected to the drain of the field effect transistor (22) and an input impedance termination (23) is connected to the gate of the field effect transistor (22). The sub-harmonic termination (21) reduces a non-linear component of an interference signal.

Method for altering a difference frequency signal and amplifier circuit

A semiconductor device having a short gate length is fabricated. The short gate length is obtained by utilizing the fact that an unannealed silicon nitride can be isotropically etched while not etching an annealed silicon nitride layer. The method comprises forming a first silicon nitride 13 on a semiconductor material 10, annealing layer 13, forming an insulating layer 15, a second silicon nitride layer 17 and a masking layer 19, undercutting a portion of layers 17 and 15, removing the masking layer, annealing the second silicon nitride 17, implanting to form channel region 20 having portions 21 and 22, undercutting a portion of the insulating layer 15, removing the second silicon nitride 17 and the first silicon nitride 13 not covered by layer 15, forming gate 23 having effective gate length 30 and source/drain 25/26.

Method of making a semiconductor device having a short gate length

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Phoenix, AZ, United States of America

George B Norris