Massachusetts Institute of Technology

Other

The Charles Stark Draper Laboratory, Inc.

Entratympanic, LLC

North Carolina State University

Lumenz, Inc.

Ultrafine Powder Technology, Inc.

Metallurgical Instruments, Inc.

George B Kenney

Wendell Eugene Rhine

William L Robbins

John S Haggerty

William D Goodhue

R Allen Murphy

Dennis D Rathman

Lev Rosenblum

Christian Pfeffer

Julia Sigalovsky

Annamarie Lightfoot

Charles P Ashdown

John Dimitris Joannopoulos

Shanhui Fan

Lionel Cooper Kimerling

Michal Lipson

Robert F Davis

Bunmi T Adekore

Kevin M Chen

Jonathan M Pierce

James G Bewley

A device insertable in the ear canal for substance delivery to and/or extraction from the tympanic cavity is described that includes a stationary body having a distal surface, a proximal surface; a movable body having a distal surface and a proximal surface, disposed within the stationary body and free to move relative to the stationary body in response to a pressure difference created in the ear canal; and at least one piercing element having a distal end and a proximal end, disposed in the movable body.

Device and method for delivering medicine into the tympanic cavity, with sliding assist

A device for substance delivery to and/or extraction from the tympanic cavity, comprising: a stationary body having a distal surface, a proximal surface; a movable body having a distal surface and a proximal surface, disposed within the stationary body and free to move relative to the stationary body; at least one piercing element having a distal end and a proximal end, disposed in the movable body; and a means for moving the movable body relative to the stationary body.

Device and method for delivering medicine into the tympanic cavity,with sliding assist

A p-type ZnO-based II-VI compound semiconductor layer has silver, potassium and/or gold dopants therein at a net p-type dopant concentration of greater than about 1&#xd7;10cm. A method of forming the layer includes using an atomic layer deposition (ALD) technique. This technique includes exposing a substrate to a combination of gases: a first reaction gas containing zinc at a concentration that is repeatedly transitioned between at least two concentration levels during a processing time interval, a second reaction gas containing oxygen and a p-type dopant gas containing at least one p-type dopant species selected from a group consisting of silver, potassium and gold. A concentration of oxygen in the second reaction gas may also be repeatedly transitioned between at least two concentration levels. The concentration of zinc in the first reaction gas and the concentration of oxygen in the second reaction gas may be transitioned in an alternating sequence, so that relatively high zinc concentrations in the first reaction gas overlap with relatively low oxygen concentrations in the second reaction gas and vice versa.

Methods of forming zinc oxide based II-VI compound semiconductor layers with shallow acceptor conductivities

An electromagnetic wavelength filter that allows the transmission of electromagnetic energy within a narrow range of wavelengths while reflecting incident electromagnetic energy at other wavelengths. The filter includes at least one cavity region; and at least two reflectors surrounding the at least one cavity region, at least one of the reflectors being an omni-directional reflector. The omni-directional reflector includes a structure with a surface and an index of refraction variation perpendicular to the surface, and the omni-directional reflector is specifically configured to exhibit high omni-directional reflection for a predetermined range of frequencies of incident electromagnetic energy for any angle of incidence and any polarization.

Thin film filters using omnidirectional reflectors

An electronic device package is provided, consisting of reaction bonded silicon nitride structural and dielectric components and conductor, resistor, and capacitor elements positioned with the package structural components. The package consists of a ceramic package base characterized by a dielectric constant less than 6, of reaction bonded silicon nitride, or a heat spreader material. An electrical conductor is positioned on, embedded in, or attached to the package base for making electrical contact to an electronic device supported on the base and in preferred embodiments, a resistor is attached to the package base. The invention also provides package sidewalls connected to the package base, preferably of reaction bonded silicon nitride, and at least one electrical conductor extending to an outside surface of the package sidewalls for making electrical contact to an electronic device supported by the package base. The reaction formed electronic device packages of the invention provide the ability to support high device signal frequencies, high device operational temperatures, and high environmental temperatures, due to the characteristics of the package materials. The reaction formed electronic device packages of the invention may be produced with a nitriding process during which the overall package structure exhibits minimal shrinkage. As a result, the reaction formed electronic device packages of the invention may be shaped to finished dimensions before the nitriding process with complicated and tight-tolerance geometries of package structural, conducting, resistive, and capacitive components.

Net-shape ceramic processing for electronic devices and packages

A method of producing electronic device packages is provided, consisting of the steps of shaping a package preform and heating the package preform in a nitrogen-containing atmoshpere to nitride the package preform. The shaped package preform may consist of package base, sidewall, conductor, resistor, or capacitor components. The package base and sidewall components may be formed of silicon powder. The method also accommodates the step of inserting a semiconducting material into the package preform and heating the semiconducting material component along with the package preform. The inserted semiconducting material component may be processed to define active electronic device areas on the component either before or after the step of heating the shaped package preform and inserted semiconducting material component. The package production methods of the invention provide the ability to produce reaction bonded structural and dielectric package components by way of a nitriding process that causes minimal overall shrinkage of the package. As a result, reaction formed electronic device packages of the invention may be shaped to finished dimensions before the nitriding process with complicated and tight-tolerance geometries of package structural, conducting, resistive, and capacitive components. The package production methods of the invention also provide the ability to interleave electronic device and packaging manufacturing sequence steps, resulting in increased manufacturing efficiency, as well as improved performance in the devices and packages produced. Device substrates or partially fabricated devices may be embedded into semi-finished packages, whereby completion of device fabrication coincides with completion of package fabrication. This makes possible the fabrication of active devices and circuits in a fully packaged environment.

Soluble gas is introduced in a melt material which is then atomized and rapidly cooled. The cooling drives the gas from solution, further disintegrating the atomized material to an ultra-fine powder. In one embodiment the atomization and rapid cooling are effected using a gas atomization die. Introduction of the soluble gas may be effected by addition of reactive constituents to the melt, for reactively forming such gas. Finer powders with desirable metallurgical properties are formed using a metallic melt.

Fine hollow particles of metals and metal alloys and their production

A method for generating an aerosol powder from a melt includes an atomization die having an orifice through which the melt passes to create the powder. In a preferred embodiment, the orifice has a dimension less than 5 millimeters, and may include a heater to prevent freeze-off. The die may be included in a high-temperature probe suitable for immersion on the melt, so that accumulated accretions of powder on the walls of the probe may be melted off by heating the probe.

Method for in-process multi-element analysis of molten metal and other

Tandem atomization method for ultra-fine metal powder

An apparatus for generating an aerosol powder from a melt includes an atomization die having an orifice through which the melt passes to create the powder. In a preferred embodiment, the orifice has a dimension less than 5 millimeters, and may include a heater to prevent freeze-off. The die may be included in a high-temperature probe suitable for immersion in the melt, so that accumulated accretions of powder on the walls of the probe may be melted off by heating the probe.

Apparatus for in-process multi-element analysis of molten metal and

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Medfield, MA, United States of America

George B Kenney