Ramtron Corporation

George A Rohrer

Larry D McMillan

Larry D McMillin

Carlos Paz De Araujo

A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferroelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 25,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

Monolithic semiconductor integrated circuit ferroelectric memory device

Method of making ferroelectric memory devices

Methods for forming targets of ferroelectric, metal nitrate or similar material, methods for depositing such materials using ion beam techniques, and a method for forming a combined and integrated circuit/ferroelectric memory device wherein the ferroelectric material is deposited using ion beam techniques.

Combined integrated circuit/ferroelectric memory device, and ion beam

A monolithic semiconductor integrated circuit-ferroelectric device is disclosed together with the method of manufacturing same. The ferrelectric device preferably consists of a layer of stable ferroelectric potassium nitrate disposed between electrical contacts positioned on opposite surfaces of the ferroelectric layer. The ferroelectric layer has a thickness of less than 110 microns, and preferably falling within a range of from 100 Angstrom units to 5,000 Angstrom units. The process of manufacturing the monolithic structure is multi-stepped and is particularly adapted for fabricating a potassium nitrate ferroelectric memory on a semiconductor integrated circuit.

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Chassell, MI, United States of America

George A Rohrer