International Business Machines Corporation

Globalfoundries Inc.

George A Dunbar, Iii

Anthony K Stamper

William Joseph Murphy

Jeffrey C Maling

Arne Watson Ballantine

Zhong-Xiang He

David H Yao

Jeffrey P Gambino

Christopher Vincent Jahnes

Andrew Herbert Simon

Edward Crandal Cooney, Iii

Stephen Edward Greco

Eric Jeffrey White

Robert Michael Geffken

Nancy Anne Greco

Roger W Cheek

Russell T Herrin

Ronald A Warren

Jay Sanford Burnham

Ronald Dean Goldblatt

Charles F Musante

Jeffrey D Gilbert

Dinh Dang

John G Twombly

Donna Kaye Johnson

Glenn Robert Miller

Thai Doan

Kenneth F McAvey, Jr

Damyon L Corbin

Prabhat Tiwari

Frank V Liucci

John C Hall

Glenn C MacDougall

James V Hart, Iii

Cheryl Faltermeier

Bruce A Root

Planar cavity Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structure are provided. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity having a planar surface using a reverse damascene process.

Planar cavity MEMS and related structures, methods of manufacture and design structures

A Micro-Electro-Mechanical System (MEMS). The MEMS includes a lower chamber with a wiring layer and an upper chamber which is connected to the lower chamber. A MEMS beam is suspended between the upper chamber and the lower chamber. A lid structure encloses the upper chamber, which is devoid of structures that interfere with a MEMS beam. The lid structure has a surface that is conformal to a sacrificial material vented from the upper chamber.

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower sacrificial material used to form a lower cavity. The method further includes forming a cavity via connecting the lower cavity to an upper cavity. The cavity via is formed with a top view profile of rounded or chamfered edges. The method further includes forming an upper sacrificial material within and above the cavity via, which has a resultant surface based on the profile of the cavity via. The upper cavity is formed with a lid that is devoid of structures that would interfere with a MEMS beam, including: depositing a lid material on the resultant surface of the upper sacrificial material; and venting the upper sacrificial material to form the upper cavity such the lid material forms the lid which conforms with the resultant surface of the upper sacrificial material.

A backside metal ground plane with improved metal adhesion and methods of manufacture are disclosed herein. The method includes forming at least one through silicon via (TSV) in a substrate. The method further includes forming an oxide layer on a backside of the substrate. The method further includes forming a metalized ground plane on the oxide layer and in electrical contact with an exposed portion of the at least one TSV.

Backside metal ground plane with improved metal adhesion and design structures

A method of forming at least one Micro-Electro-Mechanical System (MEMS) includes forming a lower wiring layer on a substrate. The method further includes forming a plurality of discrete wires from the lower wiring layer. The method further includes forming an electrode beam over the plurality of discrete wires. The at least one of the forming of the electrode beam and the plurality of discrete wires are formed with a layout which minimizes hillocks and triple points in subsequent silicon deposition.

A method of forming a semiconductor device having aluminum lines therein, wherein the occurrence of lateral extrusions and voids are reduced. The method comprises the formation of a metal stack on a surface of the substrate, wherein the aluminum layer of the metal stack is deposited under controlled conditions; etching the metal lines in the metal stack; and exposing the substrate to a subsequent anneal.

Method for controlling extrusions in aluminum metal lines and the device formed therefrom

A method for increasing the production yield of semiconductor devices having copper metallurgy planarized by a chemical-mechanical planarization process which includes a slurry that contains a conductor passivating agent, like benzotriazole, wherein a non-oxidizing anneal is used to remove any residue which might interfere with mechanical probing of conductive lands on the substrate prior to further metallization steps. The anneal may be performed by any of several techniques including a vacuum chamber, a standard furnace or by rapid thermal annealing.

Method of annealing copper metallurgy

The dark current defects in a charge couple device are reduced by employing a hydrogen anneal followed by depositing a silicon nitride barrier layer by RTCVD.

Method for reducing dark current effects in a charge couple device

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Essex Junction, VT, United States of America

George A Dunbar, Iii