Spin Memory, Inc.

Integrated Silicon Solution, (Cayman) Inc.

Georg Wolf

Jorge Vasquez

Mustafa Pinarbasi

Bartlomiej Adam Kardasz

Danny Yam

Roberto Cordero

Thomas D Boone

Jacob Anthony Hernandez

Kadriye Deniz Bozdag

Steven Watts

A method for manufacturing a magnetic memory array provides back end of line annealing for associated processing circuitry without causing thermal damage to magnetic memory elements of the magnetic memory array. An array of magnetic memory element pillars is formed on a wafer, and the magnetic memory elements are surrounded by a dielectric isolation material. After the pillars have been formed and surrounded by the dielectric isolation material an annealing process is performed to both anneal the memory element pillars to form a desired grain structure in the memory element pillars and also to perform back end of line thermal processing for circuitry associated with the memory element array.

Method for manufacturing a magnetic random-access memory device using post pillar formation annealing

The disclosure provides a magnetic random access memory element. The magnetic random access memory element includes a magnetic reference layer, a magnetic free layer, and a non-magnetic barrier layer between the magnetic free layer and the magnetic reference layer. The magnetic random access memory element further includes a MgO layer contacting the magnetic free layer. The MgO layer includes multiple homogeneous layers of MgO that provide excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.

High retention storage layer using ultra-low RA MgO process in perpendicular magnetic tunnel junctions for MRAM devices

A method for manufacturing a magnetic random access memory element having increased retention and low resistance area product (RA). A MgO layer is deposited to contact a magnetic free layer of the memory element. The MgO layer is deposited in a sputter deposition chamber using a DC power and a Mg target to deposit Mg. The deposition of Mg is periodically stopped and oxygen introduced into the deposition chamber. This process is repeated a desired number of times, resulting in a multi-layer structure. The resulting MgO layer provides excellent interfacial perpendicular magnetic anisotropy to the magnetic free layer while also having a low RA.

A magnetic field transducer mounting apparatus can include a first mount configured to fixedly couple to a side surface of a wafer test fixture magnet, and a second and third mount configured to adjustably position a magnetic field transducer in a predetermined location proximate a face of the wafer test fixture magnet.

Magnetic field transducer mounting methods for MTJ device testers

A magnet mounting apparatus including a cage, a magnet carriage and first actuator for use in testing Magnetic Tunnel Junction (MTJ) devices. The cage can be configured for mounting to an Automated Test Equipment (ATE). The magnet carriage can be configured for coupling to a wafer test magnet. The first actuator can be coupled between the cage and the magnet carriage. The first actuator can be configured to move the magnet carriage between a first position and a second position along a z-axis. The first position can be configured for locating the wafer test magnet within a predetermined proximity to a Device Under Test (DUT) wafer, and the second position can be configured for replacing a probe card.

Magnet mounting apparatus for MTJ device testers

Magnetic field transducer mounting apparatus for MTJ device testers

A magnetoresistive random-access memory (MRAM) is disclosed. The MRAM bit cell consists of a magnetic tunnel junction stack having a significantly improved performance of the magnetic storage layer. The MRAM device utilizes a polarizer layer with a magnetic vector that can switch between a stabilizing magnetic direction and a programming magnetic direction.

Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching

A magnetic memory element for Magnetic Random Access Memory. The magnetic memory element has improved reference layer magnetic pinning. The magnetic memory element has a magnetic free layer, a magnetic reference layer and a non-magnetic barrier layer located between the magnetic free layer and the magnetic reference layer. The magnetic reference layer has a magnetic moment that is pinned in a perpendicular orientation through exchange coupling with a synthetic antiferromagnetic structure that includes first and second magnetic structures and an antiferromagnetic exchange coupling structure located between the first and second magnetic structures. The antiferromagnetic exchange coupling structure includes a layer of Ru located between first and second layers of Pt. The Pt layers in the antiferromagnetic exchange coupling structure advantageously increases the magnetic proximity effect at both Ru interfaces, which extends the exchange coupling range of the antiferromagnetic exchange coupling layer.

Antiferromagnetic exchange coupling enhancement in perpendicular magnetic tunnel junction stacks for magnetic random access memory applications

A magnetic memory element for Magnetic Random Access Memory. The magnetic memory element has improved reference layer magnetic pinning and reduced dipole fringing field effect on the magnetic free layer. The magnetic memory element includes a magnetic reference layer having a pinned magnetization, a magnetic free layer having a switchable magnetization and a non-magnetic barrier layer between the magnetic reference layer and the magnetic free layer. The magnetic reference layer is exchange coupled with a synthetic anti-ferromagnetic structure that includes a first multi-layer structure, a second multi-layer structure and a non-magnetic anti-parallel exchange coupling layer located between the first and second multi-layer structures. Each of the first and second multi-layer structures includes a plurality of bi-layers of Pt and Co, with the Pt being deposited first and located below the Co.

Magnetic memory having a pinning synthetic antiferromagnetic structure (SAF) with cobalt over platinum (Pt/Co) bilayers

A method for manufacturing a magnetic memory element for use in a magnetic random access memory device to form a MgO spin current coupling layer with improved spin current coupling and reduced device area resistance (RA). The method involves depositing a magnetic free layer structure, and then depositing a MgO spin current coupling layer over the magnetic free layer. The magnetic spin current coupling layer is deposited in a sputter deposition chamber using radio frequency (RF) power. The sputter deposition of the spin current coupling layer can be performed using a MgO target without intervening oxidation steps to form a continuous layer of MgO that is not a multilayer structure of Mg and intermittent oxidation layers. Because the MgO spin transport layer deposited by this RF sputtering does not affect RA of the device, the thickness of the MgO spin transport layer can be adjusted to optimize spin transport performance.

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San Francisco, CA, United States of America

Georg Wolf