Infineon Technologies Ag

Georg Troska

Hans Hartung

Marianna Nomann

Olga Simon

Anita Herzer

Markus Wiesemann

Fabian Jäger

A semiconductor module includes a power electronics carrier including a structured metallization layer disposed on an electrically insulating substrate, a power semiconductor die mounted on the power electronics carrier, a housing that surrounds an interior volume over the power electronics carrier, a reinforcing structure contained within the interior volume and including a textured surface that is accessible by fluid, a volume of curable encapsulant disposed within the interior volume and encapsulating the power semiconductor die, wherein the reinforcing structure is embedded within the volume of curable encapsulant such that the textured surface adheres to the encapsulant, and wherein the reinforcing structure has a tensile strength that is greater than a tensile strength of the curable encapsulant.

Semiconductor encapsulant strength enhancer

A method for joining at least two joining partners includes performing a plurality of ultrasonic joining operations in direct succession, wherein performing an individual ultrasonic joining operation includes, with a second joining tool, applying pressure to a second joining partner arranged adjacent to a first joining partner, thereby pressing the second joining partner against the first joining partner, and, with the second joining tool, applying high-frequency ultrasonic vibrations to the joining partners. The method further includes, during at least one intermediate time interval between two directly successive ultrasonic joining operations, at least one of actively cooling and heating the second joining tool.

Ultrasonic joining method and arrangement

A semiconductor substrate includes a dielectric insulation layer and a first metallization layer attached to the dielectric insulation layer. The dielectric insulation layer includes a first material having a thermal conductivity of between 25 and 180 W/mK, and an insulation strength of between 15 and 50 kV/mm, and an electrically conducting or semiconducting second material evenly distributed within the first material.

Growing community of inventors

Warstein, Germany

Georg Troska