Gigaphoton Inc.

Komatsu Corporation

Osaka University

Gigahoton Inc.

Georg Soumagne

Yoshifumi Ueno

Osamu Wakabayashi

Akira Sumitani

Akira Endo

Masato Moriya

Hiroshi Komori

Shinji Nagai

Tamotsu Abe

Hideo Hoshino

Tatsuya Yanagida

Atsushi Ueda

Takashi Saito

Katsunobu Nishihara

Young Gwang Kang

Masanori Nunami

Takayuki Yabu

Toshihiro Nishisaka

Takahito Kumazaki

Gouta Niimi

Gota Niimi

A tin trap device may include a housing including a gas inlet port into which gas containing tin flows from a chamber device, an internal space which communicates with the gas inlet port, and a gas exhaust port which exhausts the gas while communicating with the internal space; a multiple tube including a plurality of tube members, arranged on a flow path of the gas traveling to the gas exhaust port from the gas inlet port through the internal space, and having a temperature at which the tin deposited from the gas adheres to the tube member; and a gas travel direction changing member configured to change a travel direction of at least fastest gas of the gas traveling from the gas inlet port to the multiple tube.

Tin trap device, extreme ultraviolet light generation apparatus, and electronic device manufacturing method

An extreme ultraviolet chamber apparatus includes: a chamber; an EUV condensing mirror arranged in the chamber; a first nozzle arranged in an outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a first direction along a reflective surface of the EUV condensing mirror; a second nozzle arranged in the outer peripheral portion of the EUV condensing mirror and configured to feed a gas in a second direction away from the EUV condensing mirror; and an exhaust port arranged in the chamber.

Extreme ultraviolet chamber apparatus, extreme ultraviolet light generation system, and method for manufacturing electronic device

The extreme ultraviolet light generation device includes a chamber having a first through-hole that allows a pulse laser beam to enter the chamber, a target supply unit held by the chamber and configured to output a target toward a predetermined region in the chamber, a shield member surrounding the predetermined region in the chamber and having a target path that allows the target outputted from the target supply unit to pass toward the predetermined region, and a tubular member surrounding at least a part of an upstream portion of the trajectory of the target outputted from the target supply unit toward the predetermined region, the upstream portion being upstream from the target path of the shield member.

Extreme ultraviolet light generation device

An extreme ultraviolet light generation device may include a chamber in which extreme ultraviolet light is generated from plasma, the plasma generated by irradiation of a target supplied in a plasma generation region inside of the chamber with laser light; a condenser mirror collecting the extreme ultraviolet light and guiding it to outside of the chamber; a first etching gas supply unit blowing an etching gas to a reflective surface of the condenser mirror and the plasma generation region; a magnet forming a magnetic field in the chamber; a port that intersects a central axis of the magnetic field and that takes in suspended substances generated in the chamber; and an ejection path that is in communication with the port and that ejects the suspended substances taken from the port to the outside of the chamber.

An extreme ultraviolet light generation apparatus may include: a chamber; a target supply unit configured to output a target toward a predetermined region inside the chamber; a first gas supply unit configured to blow out gas in a first direction toward a trajectory of the target between the target supply unit and the predetermined region; and a focusing optical system configured to concentrate a pulse laser beam to the predetermined region.

Extreme ultraviolet light generation apparatus with a gas supply toward a trajectory of a target

An EUV light source is configured for generating an EUV light for an exposure device. The EUV light source includes a chamber, a target supply device configured for supplying a target into the chamber, an optical system for introducing laser light from a driver laser into the chamber and irradiating the target with the laser light to turn the target into plasma from which EUV light is emitted, and an EUV collector mirror in the chamber. The EUV collector mirror may include a multilayered reflecting surface with grooves and collect the EUV light from the plasma to a focal spot. The grooves can be arranged in a concentric fashion, and be configured for diffracting at least light at a wavelength which is the same as that of the laser light from the driver laser.

Mirror for extreme ultra violet, manufacturing method for mirror for extreme ultra violet, and far ultraviolet light source device

An extreme ultra violet light source device of a laser produced plasma type, in which charged particles such as ions emitted from plasma can be efficiently ejected. The extreme ultra violet light source device includes: a target nozzle that supplies a target material; a laser oscillator that applies a laser beam to the target material supplied from the target nozzle to generate plasma; collector optics that collects extreme ultra violet light radiated from the plasma; and a magnetic field forming unit that forms an asymmetric magnetic field in a position where the laser beam is applied to the target material.

Extreme ultra violet light source device

In an extreme ultraviolet light source apparatus generating an extreme ultraviolet light from a plasma generated by irradiating a target, which is a droplet D of molten Sn, with a laser light, and controlling the flow direction of ion generated at the generation of the extreme ultraviolet light by a magnetic field or an electric field, an ion collection cylinderis arranged for collecting the ion, and ion collision surfaces Sa and Sb of the ion collection cylinderare provided with or coated with Si, which is a metal whose sputtering rate with respect to the ion is less than one atom/ion.

Extreme ultraviolet light source apparatus

The exposure device is able to supply only EUV radiation to a mask, while eliminating radiation other than the EUV radiation. A multi layer made from a plurality of Mo/Si pair layers is provided upon the front surface of a mirror, and blazed grooves are formed in this multi layer. Radiation which is incident from a light source device is incident upon this mirror, and is reflected or diffracted. Since the reflected EUV radiation (including diffracted EUV radiation) and the radiation of other wavelengths are reflected or diffracted at different angles, accordingly their directions of progression are different. By eliminating the radiation of other wavelengths with an aperture and/or a dumper, it is possible to irradiate a mask only with EUV radiation of high purity.

Semiconductor exposure device using extreme ultra violet radiation

An ion withdrawal apparatus that withdraws ions emitted from a plasma in an EUV light production apparatus in which a target at an EUV light production point is irradiated with laser light to be made in a plasma state and the target emits EUV light, the ion withdrawal apparatus which includes: a collector mirror that is disposed in a direction opposite to a laser light incidence direction to collect the EUV light and has a hole for the ions to pass therethrough; magnetic line of force production means that produces a magnetic line of force that is parallel or approximately parallel to the laser light incidence direction at or in the vicinity of the EUV light production point; and ion withdrawal means that is disposed on the opposite side of the collector mirror from the EUV light production point and withdraws the ions.

Apparatus for and method of withdrawing ions in EUV light production apparatus

In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The apparatus includes a chamber, a target supply unit for supplying a target material into the chamber, a collector mirror for collecting extreme ultra violet light radiated from plasma generated by irradiating the target material with a laser beam to output the extreme ultra violet light, an electromagnet arranged outside of the chamber, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the electromagnet extend.

Extreme ultra violet light source apparatus

The EUV light source device eliminates radiation other than EUV radiation from the light which it emits, and supplies only the EUV radiation to an exposure device. A composite layer consisting of a plurality of Mo/Si pair layers is provided upon the front surface of an EUV collector mirror, and blazed grooves are formed in this composite layer. Radiation emitted from a plasma is incident upon this EUV collector mirror, and is reflected or diffracted. The reflected EUV radiation (including diffracted EUV) proceeds towards an intermediate focal point IF. The radiation of other wavelengths proceeds towards some position other than this focal point IF, because its reflection angle or diffraction angle is different. A SPF shield having an aperture portion is provided at the focal point IF. Accordingly, only the EUV radiation passes through the aperture portion and is supplied to the exposure device, while the other radiation is intercepted by the shield.

Growing community of inventors

Hiratsuka, Japan

Georg Soumagne