Alzchem Trostberg Gmbh

Georg Schroll

Jürgen Sans

Christoph Hoislbauer

Maciej Kuczynski

A method for producing high-purity silicon nitride in two steps is described, wherein a) high-purity silicon is reacted with nitrogen in a rotary tubular furnace comprising a first temperature zone of 1,150 to 1,250&#xb0; C. and at least one other temperature zone of 1,250 to 1,350&#xb0; C. in the presence of a gas mixture comprising argon and hydrogen, said reaction proceeding up to a nitrogen content of 10 to 30 wt % and b) allowing the partially nitrogen-containing product from step a) to react in a chamber or settling furnace in a quiescent bed at 1,100 to 1,450&#xb0; C. with a mixture of nitrogen, argon and optionally hydrogen up to the completion of nitrogen uptake. It is possible, utilizing the method according to the invention, to produce high-purity silicon nitride with a purity of &#x3e;99.9 in a technically simple manner, wherein no further purification steps, such as leaching with inorganic acids, are required.

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Nuβdorf, Germany

Georg Schroll