Osram Oled Gmbh

Osram Opto Semiconductors Gmbh

Georg Roßbach

Hubert Halbritter

Peter Brick

Siegfried Herrmann

Tansen Varghese

Ion Stoll

David J O'Brien

Ulrich Streppel

Adrian Stefan Avramescu

David Racz

Roland Enzmann

Christopher Wiesmann

Christopher Kölper

Thomas Hager

An optoelectronic component includes a carrier, wherein the carrier includes a surface, reflective barriers are formed over the surface of the carrier, the reflective barriers divide the surface of the carrier into pixels, each pixel respectively includes at least one optoelectronic semiconductor chip arranged on the surface of the carrier, the optoelectronic semiconductor chip is configured to emit electromagnetic radiation, the optoelectronic semiconductor chip includes an upper side, the upper side faces away from the surface of the carrier, and a reflective covering is arranged on the upper side of the optoelectronic semiconductor chip.

Optoelectronic component

A method for manufacturing a multilayer optical element is disclosed. In an embodiment the method includes providing a substrate, applying a first optical layer by applying a first layer having a dielectric first material having a first refractive index, structuring the first layer by sectionally removing the first material and filling first interspaces with a dielectric second material having a second refractive index different from the first refractive index so that the second material has at least the same height as the first material, and applying at least a second optical layer by applying a second layer having the first material, structuring the second layer by sectionally removing the first material so that the first optical layer is exposed in second interspaces between second areas with the first material and filling the second interspaces with the second material so that the second material has at least the same height as the first material.

Method of manufacturing a multilayer optical element

A diffractive optical element includes a carrier and a plurality of nano- or micro-scale rods arranged above a top side of the carrier, wherein the rods are arranged parallel to one another in a regular grid arrangement. A method of producing a diffractive optical element includes providing a carrier and epitaxially growing a plurality of mutually parallel nano- or micro-scale rods in a regular gird arrangement above a top side of the carrier.

Diffractive optical element, method of producing a diffractive optical element and laser component

An optoelectronic device is disclosed. In an embodiment an optoelectronic device includes a primary radiation source configured to emit an electromagnetic primary radiation during operation of the device and a conversion element arranged in a beam path of the electromagnetic primary radiation, wherein the conversion element includes quantum dots configured to at least partially convert the electromagnetic primary radiation into an electromagnetic secondary radiation during operation of the device, and wherein the quantum dots have a diameter of 50 nm inclusive to 500 nm inclusive.

Optoelectronic device

A method for producing optoelectronic devices and a surface-mountable optoelectronic device are disclosed. In an embodiment the method includes applying semiconductor chips laterally adjacent one another on a carrier, wherein contact sides of the chips face the carrier, and wherein each semiconductor chip comprises contact elements for external electrical contacting which are arranged on the contact side of the semiconductor chip and applying an electrically conductive layer on at least sub-regions of the sides of the semiconductor chips not covered by the carrier, wherein the electrically conductive layer is formed contiguously, and wherein protective elements prevent direct contact of the contact elements with the electrically conductive layer. The method further includes electrophoretically depositing a converter layer on the electrically conductive layer and removing the electrically conductive layer from regions between the converter layer and the semiconductor chips.

Method for producing optoelectronic devices and surface-mountable optoelectronic device

Growing community of inventors

Wuppertal, Germany

Georg Roßbach