Ams Ag

Georg Rohrer

Jong Mun Park

The symmetric LDMOS transistor comprises a semiconductor substrate (), a well () of a first type of conductivity in the substrate, and wells () of an opposite second type of conductivity. The wells () of the second type of conductivity are arranged at a distance from one another. Source/drain regions () are arranged in the wells of the second type of conductivity. A gate dielectric () is arranged on the substrate, and a gate electrode () on the gate dielectric. A doped region () of the second type of conductivity is arranged between the wells of the second type of conductivity at a distance from the wells. The gate electrode has a gap () above the doped region (), and the gate electrode overlaps regions that are located between the wells () of the second type of conductivity and the doped region ().

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Lebring, Austria

Georg Rohrer