Ams Ag

Austriamicrosystems Ag

International Business Machines Corporation

Ams International Ag

Technische Universitat Graz

Georg Roehrer

Martin Knaipp

Rainer Minixhofer

Harald Etschmaier

Robert Kappel

Jong Mun Park

András Mozsáry

Steven H Voldman

James Albert Slinkman

Michael Joseph Zierak

Natalie Barbara Feilchenfeld

Richard A Phelps

Max Gerald Levy

Jochen Kraft

BethAnn Rainey

Alexander Bergmann

Hubert Enichlmair

Kerry Glover

Manfred Lueger

Mario Manninger

Anderson Singulani

Christian Mautner

Sara Carniello

Nenad Lilic

Bernhard Loeffler

Bernard Loeffler

Jong-Mun Park

Roswitha Pummer

A semiconductor body includes a driver for driving a light source, at least two detectors each including an avalanche diode, a time-to-digital converter arrangement coupled to outputs of the at least two detectors, a memory that is coupled to the time-to-digital converter arrangement and is configured to store at least one histogram, and an evaluation unit coupled to the driver and to the memory.

Measuring time-of-flight using a plurality of detector subsystems and histogram storage

A particulate matter sensor system for sensing particulate matter in a fluid includes a substrate and a cover disposed on the substrate. The cover defines at least a portion of a flow path through the microfluidic system. The sensor system includes a particulate matter sensor disposed in an interior space between the cover and the substrate. The particulate matter sensor includes an integrated sensor device electrically connected to the substrate. The flow path is defined through the particulate matter sensor. The sensor system includes a fluid circulation device disposed in the interior space between the cover and the substrate and configured to cause fluid to flow along the flow path through the microfluidic system.

Integrated particulate matter sensor systems

An optical sensor arrangement for time-of-flight comprises a first and a second cavity separated by an optical barrier and covered by a cover arrangement. An optical emitter is arranged in the first cavity, a measurement and a reference photodetector are arranged in the second cavity. The cover arrangement comprises a plate and layers of material arranged on an inner main surface thereof. The layers comprise an opaque coating with a first and second aperture above the first cavity, and with a third and fourth aperture above the second cavity. The measurement photodetector is configured to detect light entering the second cavity through the fourth aperture. The second and the third aperture establish a reference path for light from the emitter to the reference photodetector.

Optical sensor arrangement and method for manufacturing an optical sensor arrangement

A single photon avalanche diode, SPAD, comprises an active area which is arranged to generate a photon triggered avalanche current. A cover is arranged on or above the active area. The cover shields the active area from incident photons. The cover comprises a stack of at least the first and a second metal layer. At least one of the metal layers, e.g. the first metal layer, comprises an aperture. The metal layers are arranged in the stack with respect to an optical axis such as to open an effective aperture along the optical axis. By way of the effective aperture a portion of the active area is exposed to incident photons being incident along the optical axis. The effective aperture is smaller than the aperture arranged in the first metal layer.

Single photon avalanche diode and array of single photon avalanche diodes

A Hall sensor has at least four sensor terminals for connecting the Hall sensor and a plurality of Hall sensing element shaving element terminals. The Hall sensing elements are interconnected with the element terminals in a connection grid in between the sensor terminals, the connection having more than one dimension. The Hall sensing elements are physically arranged in an arrangement grid having more than one dimension and being different from the connection grid. At least some of the Hall sensing elements are connected to at least two adjacent Hall sensing elements in the connection grid.

Hall sensor

The device comprises a bipolar transistor with emitter, base, collector, base-collector junction and base-emitter junction, a collector-to-base breakdown voltage, a quenching component electrically connected with the base or the collector, and a switching circuitry configured to apply a forward bias to the base-emitter junction. The bipolar transistor is configured for operation at a reverse collector-to-base voltage above the breakdown voltage.

Light emitting semiconductor device for generation of short light pulses

A well of a first type of conductivity is formed in a semiconductor substrate, and wells of a second type of conductivity are formed in the well of the first type of conductivity at a distance from one another. By an implantation of dopants, a doped region of the second type of conductivity is formed in the well of the first type of conductivity between the wells of the second type of conductivity and at a distance from the wells of the second type of conductivity. Source/drain contacts are applied to the wells of the second type of conductivity, and a gate dielectric and a gate electrode are arranged above regions of the well of the first type of conductivity that are located between the wells of the second type of conductivity and the doped region of the second type of conductivity.

Method of producing a symmetric LDMOS transistor

The field effect transistor device comprises a substrate () of semiconductor material, a body well of a first type of electric conductivity in the substrate, a source region in the body well, the source region having an opposite second type of electric conductivity, a source contact () on the source region, a body contact region of the first type of electric conductivity in the body well, a body contact () on the body contact region, and a gate electrode layer () partially overlapping the body well. A portion (*) of the gate electrode layer () is present between the source contact () and the body contact ().

Field effect transistor device with separate source and body contacts and method of producing the device

A bolometer () comprises a first and a second suspension beam () and a semiconductor portion () that is suspended by the first and the second suspension beam () and comprises a first region () of a first conductivity type and a second region () of a second conductivity type. The first region () comprises a first triangle () or at least two stripes () or islands () which each contribute to a non-short-circuited diode () with the second region ().

Bolometer and method for measurement of electromagnetic radiation

A method for manufacturing a semiconductor element comprising a single photon avalanche diode having a multiplication zone (AR) a guard ring structure with a second type of electrical conductivity comprises providing a semiconductor wafer with a first region (R) comprising a semiconductor material with the first type of conductivity. The method further comprises generating by a first doping process a first well (W) of the guard ring structure having a first vertical depth, the first well (W) laterally surrounding the multiplication zone (AR) and having a lateral distance (A) from the multiplication zone (AR). The method further comprises generating by a second doping process a second well (W) of the guard ring structure having a second vertical depth, the second well (W) laterally surrounding and adjoining a part of the first region for laterally defining the multiplication zone (AR).

Semiconductor element with a single photon avalanche diode and method for manufacturing such semiconductor element

An isolation area () is provided over a drift region () with a spacing (d) to a contact area () provided for a drain connection (D). The isolation area is used as an implantation mask, in order to produce a dopant profile of the drift region in which the dopant concentration increases toward the drain. The implantation of the dopant can be performed instead before the production of the isolation area, and the later production of the isolation area () changes the dopant profile also in a way that the dopant concentration increases toward the drain.

High-voltage transistor with high current load capacity and method for its production

A magnetic field sensor system has a plurality of magnetic field sensor elements, which each are configured to provide an individual sensor value, and of which a first portion is arranged in a first contiguous area and a second portion is arranged in a second contiguous area, and a coil wire arrangement with a first coil portion and at least a second coil portion being connected to the first coil portion, wherein the first coil portion is arranged close to the sensor elements of the first area and the second coil portion is arranged close to the sensor elements of the second area such that, if a predetermined current is applied to the coil wire arrangement, a first magnetic field component is generated at the first area and a second magnetic field component is generated at the second area being opposite to the first magnetic field component. The magnetic field sensor system is configured to produce a total sensor value that is based on a difference between the individual sensor values provided within the areas.

Magnetic field sensor system

A high voltage JFET has a deep well of a first type of conductivity made in a semiconductor substrate, a further well of an opposite second type of conductivity arranged in the deep well, a shallow well of a first type of conductivity arranged in the further well, a first contact region for source and a second contact region for drain arranged in the further well, a third contact region for gate arranged between the first contact region and the second contact region in the shallow well, a first distance between the first contact region and the third contact region being smaller than a second distance between the second contact region and the third contact region, and an electrical connection between the first contact region and the second contact region via at least one channel region present between the deep well and the shallow well in the further well.

Asymmetric high-voltage JFET and manufacturing process

On a doped well () for a drift section, at least two additional dielectric regions () having different thicknesses are present between a first contact region () for a drain and a second contact region () for source on the upper face () of the substrate (), and the gate electrode () or an electric conductor, which is electrically conductively connected to the gate electrode, covers each of said additional dielectric regions at least partially.

High-voltage transistor having multiple dielectrics and production method

A method of forming an isolation region is provided that in one embodiment substantially reduces divot formation. In one embodiment, the method includes providing a semiconductor substrate, forming a first pad dielectric layer on an upper surface of the semiconductor substrate and forming a trench through the first pad dielectric layer into the semiconductor substrate. In a following process sequence, the first pad dielectric layer is laterally etched to expose an upper surface of the semiconductor substrate that is adjacent the trench, and the trench is filled with a trench dielectric material, wherein the trench dielectric material extends atop the upper surface of the semiconductor substrate adjacent the trench and abuts the pad dielectric layer.

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Lebring, Austria

Georg Roehrer