Infineon Technologies Ag

Georg Krebelder

Jochen Oliver Schrattenecker

Florian Starzer

Oliver Frank

Bernhard Greslehner-Nimmervoll

Alexander Melzer

Michael Kropfitsch

Christoph Wagner

Helmut Kollmann

Thomas Sailer

Rene Kobler

Martin Wiessflecker

Christoph Hazott

Bruno Mariacher

Otto Pfabigan

Sebastian Pointner

Ralf Reiterer

Andreas Dollinger

An apparatus is described that, according to an exemplary embodiment, has an RF oscillator for generating an RF oscillator signal at a first frequency and a frequency divider having a division ratio that is fixed during operation. The frequency divider is supplied with the RF oscillator signal and is configured to provide an oscillator signal at a second frequency. The apparatus further has a monitor circuit, to which the oscillator signal at the second frequency is supplied and which is configured to measure the second frequency and to provide at least one digital value that is dependent on the second frequency of the oscillator signal. The at least one digital value is provided on a test contact.

Radar front end with RF oscillator monitoring

A radar system includes a local oscillator for generating a local oscillator signal, transmission channels, and a reception channel. The transmission channels are designed to generate and output RF radar signals based on the local oscillator signal The transmission channels have phase shifters for setting the phase of the RF radar signals. The reception channel is designed to receive an RF signal and to convert it into a baseband signal by using the local oscillator signal supplied thereto. A method includes operating the local oscillator in a CW mode, setting a specific combination of phase shifts for the phase shifters of the transmission channels, altering the phase of the local oscillator signal supplied to the reception channel or of the phase shifts of the phase shifters by a phase offset, and ascertaining that phase offset for which the baseband signal at least approximately assumes a maximum.

Detection of interference-induced perturbations in FMCW radar systems

A method for producing a semiconductor device is described. In accordance with one example embodiment, the method comprises providing a virtual DUT in the form of a behavior model of the semiconductor device and developing at least one test in a test development environment for an automatic test equipment (ATE). In this case, commands are generated by means of the test development environment, which commands are converted into test signals by means of a software interface, which test signals are fed to the virtual DUT and are processable by the latter. The software interface processes response signals of the virtual DUT and reports information dependent on the response signals back to the test development environment.

Method for producing a semiconductor device by means of computer-aided development of test scenarios

A radar device comprises a test signal generator including a digital harmonic oscillator that generates a digital oscillator signal with a first spectral component; a first digital-to-analog-converter that generates an analog oscillator signal based on the digital oscillator signal. Furthermore, the radar device comprises at least one radar channel receiving the analog oscillator signal during one or more self-tests.

RF receiver with built-in test capabilities

Growing community of inventors

Ottensheim, Austria

Georg Krebelder