Osram Opto Semiconductors Gmbh

Georg Hartung

Karl Engl

Markus Maute

Michael Huber

Johann Eibl

Lutz Höppel

Sebastian Taeger

Stefanie Rammelsberger

Marcus Zenger

Rainer Hartmann

Barbara Behr

An optoelectronic semi-conductor chip is disclosed in which an encapsulation layer, which is an ALD layer, completely covers a first mirror layer on the side thereof facing away from a p-conductive region, and is arranged to be in direct contact with said first mirror layer in some sections.

Optoelectronic semiconductor chip

An optoelectronic semiconductor chip includes a semiconductor body with an active region provided for generating electromagnetic radiation, a first mirror layer provided for reflecting the electromagnetic radiation, a first encapsulation layer formed with an electrically insulating material, and a carrier provided for mechanically supporting the first encapsulation layer, the first mirror layer and the semiconductor body. The first mirror layer is arranged between the carrier and the semiconductor body. The first encapsulation layer is arranged between the carrier and the first mirror layer. The first encapsulation layer is an ALD layer.

Optoelectronic semiconductor chip encapsulated with an ALD layer and corresponding method for production

An optoelectronic component comprising a semiconductor body, a first connection layer, an insulation layer and a second connection layer, wherein the semiconductor body has an active region for generating electromagnetic radiation and the second connection layer comprises a first partial layer and a second partial layer is specified, wherein

Optoelectronic component

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Nesselwang, Germany

Georg Hartung