Qimonda Ag

Rising Silicon, Inc.

Georg Duesberg

Maik Liebau

Franz Kreupl

Eugen Unger

Robert Seidel

Olaf Storbeck

Christian Kapteyn

Guenther Aichmayr

Gernot Steinlesberger

Thomas Betzl

A circuit is disclosed. The circuit includes at least one nanostructure and a carbon interconnect formed by a substantially carbon layer, wherein the nanostructure and the carbon interconnect are directly coupled to one another.

Electrical circuit with a nanostructure and method for producing a contact connection of a nanostructure

One embodiment of the present invention provides a method for the deposition of a Carbon containing layer on a Silicon surface wherein a (i) substantially Silicon-oxide-free or reduced oxide interface results between Silicon and the Carbon containing layer during the deposition. In another embodiment, the present invention provides a method for deposition of a Carbon containing layer wherein the deposition process is substantially soot (particle)-free or reduction of soot.

Methods for elimination or reduction of oxide and/or soot deposition in carbon containing layers

A method of making an integrated circuit comprises providing a substrate and forming a structure on the substrate comprising a first enclosed portion of a carbon material and a second portion of the carbon material, wherein an intersection of the first and second portion of the carbon material has a defined dimension. The method further comprises processing the substrate with a plasma comprising hydrogen in order to etch the second portion of the carbon material, wherein the defined dimension of the intersection of the first and second portion of the carbon material substantially suppresses etching of the first enclosed portion of the carbon material in a self-limiting way.

Integrated circuits, micromechanical devices, and method of making same

In a method of producing a layer arrangement, a substantially carbon-comprising, electrically conductive carbon layer is formed. A protective layer is formed on the carbon layer. An electrically insulating layer is formed on the protective layer, the protective layer protecting the carbon layer from damage during the formation of the electrically insulating layer. Furthermore, a layer arrangement is provided, having a substantially carbon-comprising, electrically conductive carbon layer, a protective layer formed on the carbon layer, and an electrically insulating layer formed on the protective layer, the protective layer being used to avoid damage to the carbon layer by the electrically insulating layer.

Method of producing a layer arrangement, method of producing an electrical component, layer arrangement, and electrical component

A process for silanizing carbon nanotubes, wherein the carbon nanotubes are oxidized and subsequently exposed to a saturated gas phase including one or more organosilane derivatives which form covalent bonds to the carbon nanotubes with siloxane formation.

Growing community of inventors

Dresden, Germany

Georg Duesberg