Osram Opto Semiconductors Gmbh

Osram Oled Gmbh

Osram Oledgmbh

Georg Dirscherl

Alexander Linkov

Matthias Sabathil

Nina Riegel

Britta Göötz

Andreas Rausch

Dominik Pentlehner

Britta Goeoetz

Carola Diez

Frank Singer

Siegfried Herrmann

Karl Weidner

Thomas Wehlus

Jürgen Moosburger

Walter Wegleiter

Ion Stoll

David J O'Brien

Axel Kaltenbacher

Juergen Moosburger

Wolfgang Moench

Guido Kickelbick

Caroline Cassignol

Marcus Adam

Matthias Wolf

A method for producing an output coupling element and an output coupling element are disclosed. In an embodiment a method includes producing a suspension having quantum dots in a suspension medium, wherein each quantum dot comprises a core having a semiconductor material, directly applying the suspension onto a surface of an optoelectronic component and/or onto a surface of a carrier and removing the suspension medium for producing the output coupling element, wherein the output coupling element is matrix-free and transparent to radiation of a red range and/or a IR range.

Method for producing an output coupling element for an optoelectronic component and output coupling element

A method of producing an outcoupling element for an optoelectronic component includes A) providing quantum dots each having a core made of a semiconductor material, B) applying an inorganic or a phosphonate-containing ligand shell on a respective core of the quantum dots, and C) introducing the quantum dots with the ligand shell into a matrix material, wherein introducibility of the quantum dots with the ligand shell is facilitated compared to the quantum dots produced in step A), and the outcoupling element is transparent for radiation from the red and/or IR region.

Method of producing an outcoupling element for an optoelectronic component and outcoupling element

A method for producing an electronic device and an electronic device are disclosed. In an embodiment a method for producing an electronic device includes attaching semiconductor chips on a carrier, applying a fluoropolymer to main surfaces of the semiconductor chips facing away from the carrier and a main surface of the carrier facing the semiconductor chip thereby forming an encapsulation layer including a fluoropolymer, structuring the encapsulation layer thereby forming cavities in the encapsulation layer and applying a metal layer in the cavities.

Method for producing an electronic device and electronic device

The invention relates to an optoelectronic component () comprising a semiconductor chip () configured for emitting radiation, a conversion element () comprising quantum dots () and configured for wavelength conversion of radiation, wherein the conversion element () comprises a layer structure () having a plurality of inorganic barrier layers (), wherein the inorganic barrier layers () are spatially separated from one another at least regionally by a hybrid polymer (), wherein the hybrid polymer () comprises organic and inorganic regions that are covalently bonded to one another, wherein the quantum dots () are embedded in the hybrid polymer () and/or at least in one of the barrier layers ().

Optoelectronic component and method for producing an optoelectronic component

A method for producing a multifunctional layer, a method for producing an electrophoresis substrate, and a method for producing a converter plate and an optoelectronic component are disclosed. In an embodiment the method includes providing an electrophoresis substrate comprising a carrier having a front side and a back side, wherein a first electrically conductive layer and a second electrically conductive layer are located on the front side, electrophoretically depositing a first material onto the first electrically conductive layer, electrophoretically depositing a second material onto the second electrically conductive layer and arranging a filler material between the first material and the second material, wherein the filler material forms a common boundary surface with the first material and the second material.

Method for producing a multifunctional layer, electrophoresis substrate, converter plate and optoelectronic component

A method of producing a light-emitting arrangement includes providing a carrier including a top side, attaching a multitude of first conversion elements on the top side of the carrier, wherein the first conversion elements are arranged in a lateral direction spaced apart from one another, attaching an encapsulation on the top side of the carrier, wherein the encapsulation covers the carrier and the first conversion elements at least sectionally, removing the encapsulation in regions between the first conversion elements, and attaching optoelectronic semiconductor chips between the first conversion elements.

Method of producing a light-emitting arrangement

According to the present disclosure, an organic light-emitting diode device is disclosed with an organic light-emitting diode having a first main surface and a second main surface lying opposite the first main surface, an optically functional device having a first hollow space and a second hollow space, and a control element. The first hollow space is arranged on or over the first main surface, and the second hollow space is arranged below the second main surface. The first hollow space and the second hollow space are connected to one another by means of a fluid connection. An optically functional fluid is arranged in the optically functional device. The control element is configured to move the optically functional fluid to and fro between the first hollow space and the second hollow space.

Organic light-emitting diode device

A light-emitting arrangement includes a radiation-emitting semiconductor chip that, during operation, emits primary radiation at least from a main emission surface, a first conversion element that absorbs part of the primary radiation and emits secondary radiation, and a deflection element that causes a direction change for part of the primary radiation, wherein the first conversion element is arranged in a lateral direction next to the radiation-emitting semiconductor chip, the deflection element guides part of the primary radiation onto the first conversion element, and the light-emitting arrangement, in operation, emits mixed light including the primary radiation and the secondary radiation.

Light-emitting arrangement and method of producing a light-emitting arrangement

In various exemplary embodiments, a method is provided for producing an assembly emitting electromagnetic radiation. In this case, a component composite structure is provided which has components emitting electromagnetic radiation, which components are coupled to one another physically in the component composite structure. In each case at least one component-individual property is imparted to the components. Depending on the determined properties of the components, a structure mask for covering the components in the component composite structure is formed, wherein the structure mask has structure mask cutouts corresponding to the components, which structure mask cutouts are formed in component-individual fashion depending on the properties of the corresponding components. The structure mask cutouts provide phosphor regions, which are exposed in the structure mask cutouts, on the components. Phosphor layers are formed on the phosphor regions of the components.

Method for producing an assembly emitting electromagnetic radiation, and assembly emitting electromagnetic radiation

An optoelectronic component is provided. The optoelectronic component includes an electromagnetic radiation source including an optically active region designed for emitting a first electromagnetic radiation, and a converter structure, which includes at least one converter material and is arranged in the beam path of the first electromagnetic radiation. The at least one converter material is designed to convert at least one portion of the first electromagnetic radiation into at least one second electromagnetic radiation. The at least one second electromagnetic radiation has at least one different wavelength than the at least one portion of the first electromagnetic radiation. The converter structure is formed in a structured fashion in such a way that the converter structure has a predefined region, such that the at least one second electromagnetic radiation is emittable only from the predefined region. The predefined region has a smaller area than the optically active region.

Optoelectronic component, method for producing an optoelectronic component

A method for producing an optoelectronic component includes creating a first layer of a polymer material. The method also includes applying crystals to a surface of the first layer. The method also includes creating a second layer of a polymer material on the surface of the first layer. The crystals can be between the first and second layers.

Optoelectronic component and method for the production thereof

What is specified is an optoelectronic component comprising a layer sequence having an active layer, which emits primary electromagnetic radiation, and at least one transparent coupling-out element arranged in the beam path of the primary electromagnetic radiation. The at least one transparent coupling-out element comprises a hybrid material or is produced from a hybrid material.

Optoelectronic component comprising a transparent coupling-out element

The invention relates to an optoelectronic semiconductor component, which has a carrier element (), on which an optoelectronic semiconductor chip () having at least one active layer is arranged, wherein the active layer is designed to emit or receive light during operation and wherein the semiconductor chip () is covered with a protective layer () that contains poly-para-xylenes.

Optoelectronic semiconductor component

An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 &#x3bc;m. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device.

Growing community of inventors

Tegernheim, Germany

Georg Dirscherl