Infineon Technologies Ag

Qimonda Ag

Siemens Aktiengesellschaft

Hochschule Munchen

Georg Braun

Heinz H&ouml;nigschmid

Hermann Ruckerbauer

Thomas R&ouml;hr

Thomas B&ouml;hm

Zoltan Manyoki

Johannes Stecker

Michael Bruennert

Peter Gregorius

George William Alexander

Heinz Hoenigschmid

Anthony Sanders

Richard Johannes Luyken

Andreas Jakobs

Alexander Benedix

Dirk Scheideler

Bernd Klehn

Edoardo Prete

Ernst Neuhold

Steve Wood

Hans-Peter Trost

Andreas Gärtner

Maksim Kuzmenka

Dominique Savignac

Kurt Hoffmann

Christian Weis

Oskar Kowarik

Simon Muff

Thomas Peter Haneder

Eckehard Plaettner

Thomas Boehm

Heinz Honigschmid

Andrej Majdic

Andreas Gaertner

Josef Willer

Werner Weber

Helmut Fischer

Thomas Roehr

Till Schl&ouml;sser

Stefan Lammers

Christine Dehm

G&uuml;nther Schindler

Carlos Mazure-Espejo

Aaron Nygren

Jens Christopher Egerer

Maurizio Skerlj

Christl Lauterbach

Helmut Kandolf

Andre Schaefer

Ralf Schledz

Ronny Schneider

Christian Robert Mueller

Harald Bachhofer

Wolfgang Hönlein

Siva RaghuRam

Srdjan Djordjevic

Ullrich Menczigar

Tobias Schlager

Sebastian Kuhne

Robert Esterl

Udo Ollert

Martin Gall

Marc Ullmann

Amir Motamedi

Renate Bergmann

Sitt Tontisirin

Distributed command and address bus architecture for memory modules and circuit boards is described. In one embodiment, a memory module includes a plurality of connector pins disposed on an edge of a circuit board, the plurality of connector pins comprising first pins coupled to a plurality of data bus lines, second pins coupled to a plurality of command and address bus lines, wherein the second pins are disposed in a first and a second region, wherein a portion of the first pins is disposed between the first and the second regions.

Distributed command and address bus architecture for a memory module having portions of bus lines separately disposed

A memory system includes a number of integrated circuit chips coupled to a bus. Each of the integrated circuit chips has an input/output node coupled to the bus, the input/output node having a programmable on-die termination resistor. The input/output node of one of the integrated circuit chips is accessed via the bus. The programmable on-die termination resistor of each of the integrated circuit chips is independently set to a termination resistance. The termination resistance is determined by a transaction type and which of the plurality memory devices is being accessed, which information can be transmitted over a separate transmission control bus.

Bus termination system and method

An apparatus for providing a signal for transmission via a signal line includes a controller circuit having an output for a signal indicating whether the signal line is or will be in an inactive state and a switching circuit coupled to the controller circuit and having an output coupled to the signal line. The output is switched between different signal levels, if the signal indicates that the signal line is in an inactive state.

Apparatus and method for providing a signal for transmission via a signal line

Memory devices and memory modules are disclosed. In one embodiment, a memory device includes a semiconductor substrate having a first edge and a second edge opposed to the first edge. A plurality of memory banks is disposed at a central portion of the semiconductor substrate, each memory bank including a plurality of memory cells. A plurality of input/output contacts is disposed between the first edge and the memory banks. Delay locked loop circuitry is disposed adjacent the first edge. A plurality of address and command contacts is disposed between the second edge and the memory banks.

High speed memory architecture

A method of operating an integrated circuit involves supplying an instruction portion of a command to the integrated circuit to specify an operation to be performed by the integrated circuit. At least some types of commands also include an attributes portion that provides additional information about the operation to be performed. The attributes portion of the command is supplied to the integrated circuit with a delay relative to the instruction portion of the command. The integrated circuit selectively enables circuitry for processing the attributes portion if the integrated circuit determines from the received instruction portion that the command also includes an attributes portion. The delay between the two portions of the command provides sufficient time for the integrated circuit to enable the attributes processing circuitry, which, in a default state, can be disabled during an active mode of the integrated circuit to save power.

Command protocol for integrated circuits

A memory die, including a memory array, a memory array data terminal and a data bus that includes a first sub bus and a second sub bus is disclosed. A first bi-directional buffer arranged between the memory array data terminal and the first sub bus and a second bi-directional buffer arranged between the memory array data terminal and the second sub bus is also disclosed. The first and second bi-directional buffers are adapted to couple the first sub bus or the second sub bus to the memory array data terminal at a time.

Memory dies for flexible use and method for configuring memory dies

Horizontal dual in-line memory modules are disclosed. In one embodiment, the memory module includes a circuit board, a plurality of memory chips attached to a top surface of the circuit board, and a plurality of connector contacts disposed under a back surface of the circuit board and extending away from the memory chips, the connector contacts being electrically coupled to the memory chips, the back surface opposite the top surface of the circuit board.

Horizontal dual in-line memory modules

An apparatus being connectable as a latch stage into a asynchronous latch chain comprises a reception interface, wherein upon receipt of the first signal at the reception interface, the apparatus switches to one of the first power saving mode and a second power saving mode, depending on the second signal at the reception interface and wherein the apparatus offers a first power consumption and a first wake-up time in the first power saving mode, and a second power consumption and a second wake-up time in the second power saving mode.

Apparatus and method for switching an apparatus to a power saving mode

A buffer component for a memory module having a plurality of memory components includes item of access information in accordance with a data transmission protocol, the address, clock, control and command signals depending on the access information, a second data interface for driving a clock signal and address and command signals to the plurality of memory components and for driving a control signal to a group of the plurality of memory components in accordance with a signaling protocol, wherein an activation of the memory components and an acceptance of the address and command signals are effected in a manner dependent on the control signals, and a control unit which applies the address and command signals to the plurality of memory components during a first clock period of the clock signal and applies the control signal for activating the group of the plurality of memory components to the group of the plurality of memory components to be activated when address and command signals are present, in a succeeding second clock period of the clock signal, whereby the address and command signals present are accepted into the group of the plurality of memory components.

Buffer component for a memory module, and a memory module and a memory system having such buffer component

Methods and apparatus for setting various terminations of a memory chip. The memory chip includes a terminal, a termination circuit that can be connected to the terminal in order to terminate the terminal with a settable resistance value, a control command port for receiving a control command signal, and a control circuit that is connected to the termination circuit in order to set a resistance value as a function of a received control command signal.

Memory chip with settable termination resistance circuit

A method is provided for adapting the phase relationship between a clock signal and a strobe signal for accepting write data to be transmitted into a memory circuit, a write command signal being transmitted to the memory circuit in a manner synchronized with the clock signal, a write data signal being transmitted synchronously with the strobe signal, a phase offset between the transmitted clock signal and the transmitted strobe signal being set such that the write data are reliably accepted in the memory circuit. The method comprises the following acts performed in the memory circuit: generating a write acceptance signal depending on the clock signal and the write command signal with a specific pulse duration; determining the number of edges of the strobe signal with a defined edge direction during the pulse duration; comparing the number determined with a predetermined desired number of corresponding edges of the strobe signal; and providing an item of error information indicating whether the number determined matches the desired number.

Semiconductor memory and method for adapting the phase relationship between a clock signal and strobe signal during the acceptance of write data to be transmitted

A buffer chip having a first data interface for receiving a data item which is to be written and for sending a data item which has been read, having a conversion unit for parallelizing the received data item and for serializing the data item which is to be sent, having a second data interface for writing the parallelized data item to a memory arrangement via a memory data bus and for receiving the data item read from the memory arrangement via the memory data bus; having a write buffer storage for buffer-storing the data item which is to be written, having a control unit in order, after reception of a data item which is to be written via the first data interface in line with a write command, to interrupt the data from being written from the write buffer storage via the second data interface upon a subsequent read command.

Buffer chip and method for controlling one or more memory arrangements

An integrated semiconductor memory capable of determining a chip temperature includes first control terminals for driving the integrated semiconductor memory with first control signals for performing a write access and second control terminals provided for performing a read access. The integrated semiconductor further includes a control circuit for controlling a write and read access. A temperature sensor for recording a chip temperature of the integrated semiconductor memory is connected to the control circuit. The control circuit is configured to generate a state of a third control signal at one of the first or at one of the second control terminals in a manner dependent on a temperature recorded by the temperature sensor.

Integrated semiconductor memory with determination of a chip temperature

An apparatus interfaces a first circuit using a first supply voltage and a second circuit using a second supply voltage different from the first supply voltage. The apparatus includes a driver circuit having a driver network comprising driver supply voltage terminals connected to controllable switches. The controllable switches include resistive elements or are separated from resistive elements. A receiver circuit has a receiving network comprising a resistive element and receiver supply voltage terminals and a connection line connecting the driver circuit and the receiving circuit. The controllable switches have two switch configurations, a first switch configuration resulting in a high voltage on the connection line and a second switch configuration resulting in a low voltage on the connection line.

Concept for interfacing a first circuit requiring a first supply voltage and a second supply circuit requiring a second supply voltage

A semiconductor memory array for operation in a data storage system with at least one semiconductor memory chip for the storage of user data and one memory controller for control of the at least one semiconductor memory chip includes at least one unidirectional, serial signal line bus for control and address signals connected with the memory controller, directly connecting at least one semiconductor memory chip with the memory controller and serially connecting with each other the semiconductor memory chips among each other by 1-point-to-1-point connections.

Semiconductor memory array with serial control/address bus

Growing community of inventors

Holzkirchen, Germany

Georg Braun