Osram Opto Semiconductors Gmbh

Siemens Aktiengesellschaft

Osram Opto Semiconductor Gmbh

Osram Gmbh

Infineon Technologies Ag

Osram Oled Gmbh

Osram Ag

Ams-Osram International Gmbh

Oram Gmbh

Georg Bogner

Günter Waitl

Patrick Kromotis

Stefan Grötsch

Herbert Brunner

Karlheinz Arndt

Bert Braune

Stefan Gruber

Marcus Ruhnau

Joachim Reill

Michael Hiegler

Berthold Hahn

Moritz Engl

Matthias Winter

Jörg Erich Sorg

Hans-Ludwig Althaus

Stefan Groetsch

Werner Spaeth

Mario Wanninger

Heinrich Noll

Norbert Stath

Wolfgang Gramann

Ernst Nirschl

Ralf Mayer

Frank Singer

Hubert Halbritter

Thomas Schwarz

Norwin Von Malm

Michael Zitzlsperger

Joerg Sorg

Matthias Goldbach

Thomas Zeiler

Raimund Oberschmid

Ralf Dietrich

Guenter Waitl

Karl-Heinz Schlereth

Markus Schneider

Josef Hüttner

Peter Brick

Siegfried Herrmann

Ralph Wirth

Volker Härle

Stefan Illek

Matthias Sabathil

Alexander F Pfeuffer

Karl Weidner

Erwin Lang

Karl Engl

Martin Rudolf Behringer

Reiner Windisch

Walter Wegleiter

Karsten Diekmann

Julius Muschaweck

Marc Philippens

Andreas Dobner

Andreas Biebersdorf

Petrus Sundgren

Klaus Streubel

Christoph Klemp

Bernd Barchmann

Gerhard Kuhn

Gertrud Kräuter

Franz Schellhorn

Ines Pietzonka

Axel Kaltenbacher

David Racz

Alexandra Debray

Laura Kreiner

Martin Weigert

Simon Schwalenberg

Johann Luft

Michael Brandl

Juergen Moosburger

Johann Ramchen

Kirstin Petersen

Hubert Ott

Andreas Plößl

Bernd Ludewig

Markus Zeiler

Volker Haerle

Heinz Haas

Christine Rafael

Jean-Jacques Drolet

Andreas Leber

Werner Späth

Felix Feix

Julia Stolz

Markus Kirsch

Günter Kirchberger

Thomas Höfer

Christian Berger

Ana Kanevce

Guenter Kirchberger

Werner Marchl

Hubertus Thoresia Hintzen

Herbert Breinich

Xue Wang

Klaus Hoehn

Nicole Heitzer

Jörg-Erich Sorg

The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

μ-LED, μ-LED device, display and method for the same

An optoelectronic device includes a glass carrier, at least one light-scattering layer applied to the glass carrier, and at least one surface-emitting component in a chip size package with an emission surface and a surface facing away from the emission surface having a first and a second contact pad. The emission surface is arranged on the at least one light-scattering layer by way of an adhesive. At least one contact line contacts the second contact pad of the at least one surface-emitting component and extends along a side surface of the at least one surface-emitting component adjacent to the second contact pad in a direction of the glass carrier. A light-shaping structure is arranged on a surface of the glass carrier facing away from the surface-emitting component.

Optoelectronic device with glass carrier and method of manufacture

In an embodiment a method for singulating components from a component composite includes providing the component composite comprising a structured substrate including component carrier bodies and connecting portions arranged between the component carrier bodies, and a base material, in which the connecting portions of the structured substrate are at least partially embedded, removing the base material in separating regions of the component composite, which include the connecting portions and singulating the component composite at the separating regions to form the components.

Method for singulating components from a component composite, and component

A semiconductor component includes a radiation exit surface; a semiconductor body having an active region that generates radiation; wherein a molded body molded onto the semiconductor body; contacts for external electrical contacting of the semiconductor component are accessible on an outer side of the molded body; a deflection structure arranged between the active region and the radiation exit surface; a planarization layer arranged on the deflection structure; and a polarizer arranged on a side of the planarization layer facing away from the semiconductor body; wherein the semiconductor body on a side facing away from the radiation exit surface includes a mirror structure having at least one dielectric layer and a metallic connection layer, and the dielectric layer is arranged at locations between the semiconductor body and the metallic connection layer.

Semiconductor component, device having a semiconductor component and method of producing semiconductor components

In one embodiment, an apparatus may include a light source. The apparatus also includes a measuring laser, such as a semiconductor laser. The measuring laser is configured to generate pulses with a maximum pulse duration of 10 ns. A wavelength of maximum intensity of the measuring laser radiation generated by the measuring laser ranges from 400 nm to 485 nm inclusive. The measuring laser radiation is used for distance measurement by means of LIDAR, for example in a car headlight.

Apparatus and headlight

A radiation-emitting semiconductor device and a fabric are disclosed. In an embodiment, a radiation-emitting semiconductor device includes a semiconductor layer sequence having an active region configured to generate radiation and at least one carrier on which the semiconductor layer sequence is arranged, wherein the at least one carrier has at least one anchoring structure on a carrier underside facing away from the semiconductor layer sequence, wherein the at least one anchoring structure includes electrical contact points for making electrical contact with the semiconductor layer sequence, and wherein the at least one anchoring structure is configured to receive at least one thread for fastening the semiconductor device to a fabric and for electrical contacting the at least one thread.

Radiation-emitting semiconductor device and fabric

An optoelectronic component includes a carrier, a light source formed on the carrier, the light source having at least one luminous face formed by one or more light emitting diodes, wherein an at least partly transparent lamina is arranged on the luminous face, the lamina having a surface facing the luminous face and a surface facing away from the luminous face, wherein at least one conversion layer and a color scattering layer for generating a color by light scattering are arranged on at least one of the facing and facing-away surfaces, wherein the conversion layer is arranged upstream of the color scattering layer relative to an emission direction of light from the luminous face, such that light emitted by the luminous face can first be converted and then be scattered.

Optoelectronic component

The invention relates to a semiconductor component () comprising: a plurality of semiconductor chips (), each having a semiconductor layer sequence () with an active region () for generating radiation; a radiation output side () that runs parallel to the active regions (); a mounting side surface () which is provided for securing the semiconductor component, and which runs in a transverse or perpendicular direction to the radiation output side; a molded body () which is shaped in places on the semiconductor chips, and which at least partially forms the mounting side surface; and a contact structure () which is arranged on the molded body, and which connects at least two semiconductor chips of the plurality of semiconductor chips in an electrically conductive manner. The invention also relates to a lighting device () and to a method for producing a semiconductor component.

Semiconductor component, lighting device and method for producing a semiconductor component

An optoelectronic semiconductor module includes a plurality of light-emitting areas, which emit light when in operation. At least two abutting lateral edges of at least one light-emitting area are arranged at an angle of more than 0 degrees and less than 90 degrees to each other. Further embodiments relate to a display having a plurality of such modules.

Optoelectronic semiconductor module and display having a plurality of such modules

A light-emitting diode includes a carrier including a metallic basic body having an outer face including a mounting face; and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein the at least two light-emitting diode chips are embedded in a reflective coating covering the mounting face and side faces of the at least two light-emitting diode chips, the at least two light-emitting diode chips have radiation exit surfaces facing away from the carrier, and the at least two light-emitting diode chips protrude with radiation exit surfaces out of the reflective coating, or the reflective coating terminates flush with the radiation exit surfaces of the at least two light-emitting diode chips.

Light-emitting diodes

A radiation-emitting component includes a semiconductor chip which has a first main surface, a second main surface on an opposite side from the first main surface and an active region that generates radiation; a carrier on which the semiconductor chip is fixed on the side of the second main surface; an output layer arranged on the first main surface of the semiconductor chip and forming a lateral output surface spaced apart from the semiconductor chip in a lateral direction, a recess tapering in a direction of the semiconductor chip being, formed in the output layer and deflecting radiation emerging from the first main surface during operation into the direction of the lateral output surface.

Radiation-emitting component and method for producing radiation-emitting components

A plastic housing is arranged on a carrier element and is provided with a recess in which an optoelectronic component is arranged. On the side facing away from the carrier element, the recess has an opening to the outside which can be provided with a transparent cover. One or more structures can be provided on the plastic housing in order to orient the cover and/or optical components relative to the optoelectronic component.

Optoelectronic component disposed in a recess of a housing and electrical componenet disposed in the housing

An arrangement having at least one optoelectronic semiconductor component includes a carrier element suitable for carrying the at least one optoelectronic semiconductor component. The arrangement comprises a housing body formed from a light-absorbing plastic. The housing body is arranged at the carrier element The housing body comprises an elevated region and a recessed region. An oblique flank is formed between the elevated and recessed regions. The recessed region reaches as far as the optoelectronic semiconductor component in order to reduce reflections.

Arrangement comprising at least one optoelectronics semiconductor component

An optoelectronic module includes a radiation-emitting semiconductor component, an electrical component and a carrier substrate. The carrier substrate includes a top and a bottom, wherein first electrical connections are arranged on the bottom and second electrical connections are arranged on the top. The electrical component is arranged on the top of the carrier substrate and is electrically conductively connected with the first electrical connections. The radiation-emitting semiconductor component is arranged on the side of the electrical component remote from the carrier substrate. The radiation-emitting semiconductor component furthermore includes conductive structures electrically conductively connected with the second electrical connections.

Optoelectronic module and method of producing an optoelectronic module

A light-emitting diode includes a carrier with a mounting face and includes a metallic basic body and at least two light-emitting diode chips affixed to the carrier at least indirectly at the mounting face, wherein an outer face of the metallic basic body includes the mounting face, the at least two light-emitting diode chips connect in parallel with one another, the at least two light-emitting diode chips are embedded in a reflective coating, the reflective coating covering the mounting face and side faces of the light-emitting diode chips, and the light-emitting diode chips protrude with their radiation exit surfaces out of the reflective coating, and the radiation exit surfaces face away from the carrier.

Light-emitting diode

Growing community of inventors

Lappersdorf, Germany

Georg Bogner