Nxp Usa, Inc.

Freescale Semiconductor,inc.

Geoffrey Tucker

Lakshminarayan Viswanathan

Jaynal Abedin Molla

Elie A Maalouf

Oleksandr Nikolayenkov

Paul Richard Hart

Mahesh K Shah

David F Abdo

Lu Li

Justin Eugene Poarch

Carl Emil D'Acosta

Martin Beuttner

Joseph Staudinger

Jeffrey Kevin Jones

Ramanujam Srinidhi Embar

Power amplifier modules (PAMs) having topside cooling interfaces are disclosed, as are methods for fabricating such PAMs. In embodiments, the method includes attaching the RF power die to a die support-surface of a module substrate. The RF power die is attached to the module substrate in an inverted orientation such that a frontside of the RF power die faces the module substrate. When attaching the RF power die to the module substrate, a frontside input/output interface of the RF power die is electrically coupled to corresponding substrate interconnect features of the module substrate. The method further includes providing a primary heat extraction path extending from the transistor channel of the RF power die to a topside cooling interface of the PAM in a direction opposite the module substrate.

Power amplifier modules including topside cooling interfaces and methods for the fabrication thereof

Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes first and second microstrip transmission lines. The first and second microstrip transmission lines include linearly arranged conductive strips on the circuit and a slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, where a magnitude of a capacitance value of the at least one controllable capacitance circuit (e.g., including a barium strontium titanate (BST) capacitor) is controllable (e.g., in response to a capacitance control signal received at a control interface).

Linear impedance compensation system with microstrip and slotline coupling and controllable capacitance

Embodiments of a circuit, system, and method are disclosed. In an embodiment, a circuit includes a first microstrip transmission line, a second microstrip transmission line, and a slotline formation, wherein the slotline formation extends between the first microstrip transmission line and the second microstrip transmission line so that the slotline formation is configured to electromagnetically couple the first microstrip transmission line to the second microstrip transmission line during operation of the circuit. In addition, the circuit includes at least one controllable capacitance circuit electrically connected to at least one of the first microstrip transmission line and the second microstrip transmission line, wherein a magnitude of capacitance of the at least one controllable capacitance circuit is controllable (e.g., in response to a capacitance control signal received at a control interface).

Impedance compensation system with microstrip and slotline coupling and controllable capacitance

Microelectronic systems and components having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems and components. In various embodiments, the microelectronic system includes a substrate having a frontside, a socket cavity, and inner cavity sidewalls defining the socket cavity. A microelectronic component is seated on the frontside of the substrate such that a heat dissipation post, which projects from the microelectronic component, is received in the socket cavity and separated from the inner cavity sidewalls by a peripheral clearance. The microelectronic system further includes a bond layer contacting the inner cavity sidewalls, contacting an outer peripheral portion of the heat dissipation post, and at least partially filling the peripheral clearance.

Microelectronic components having integrated heat dissipation posts and systems including the same

Systems and methods for communicating electromagnetic signals and/or power and, more particularly for example, to power combiners and similar systems and methods for communicating electromagnetic signals and/or power generated by amplifiers to loads, are described herein. In at least example embodiment, a power amplifier system includes first and second amplifier circuits and a power combiner circuit coupled to each of the first and second amplifier circuits and having a first microstrip transmission line component, a slotline formation, and an additional coupling component that is capable of being at least indirectly coupled to a load, where the first microstrip transmission line component and additional coupling component are electromagnetically coupled by way of the slotline formation.

Amplifier power combiner with slotline impedance transformer

Methods for producing high thermal performance microelectronic modules containing sinter-bonded heat dissipation structures. In one embodiment, the method includes embedding a sinter-bonded heat dissipation structure in a module substrate. The step of embedding may entail applying a sinter precursor material containing metal particles into a cavity provided in the module substrate, and subsequently sintering the sinter precursor material at a maximum processing temperature less than a melt point of the metal particles to produce a sintered metal body bonded to the module substrate. A microelectronic device and a heatsink are then attached to the module substrate before, after, or concurrent with sintering such that the heatsink is thermally coupled to the microelectronic device through the sinter-bonded heat dissipation structure. In certain embodiments, the microelectronic device may be bonded to the module substrate at a location overlying the thermally-conductive structure.

Microelectronic modules with sinter-bonded heat dissipation structures and methods for the fabrication thereof

High thermal performance microelectronic modules containing sinter-bonded heat dissipation structures are provided, as are methods for the fabrication thereof. In various embodiments, the method includes the steps or processes of providing a module substrate, such as a circuit board, including a cavity having metallized sidewalls. A sinter-bonded heat dissipation structure is formed within the cavity. The sintered-bonded heat dissipation structure is formed, at least in part, by inserting a prefabricated thermally-conductive body, such as a metallic (e.g., copper) coin into the cavity. A sinter precursor material (e.g., a metal particle-containing paste) is dispensed or otherwise applied into the cavity and onto surfaces of the prefabricated thermally-conductive body before, after, or concurrent with insertion of the prefabricated thermally-conductive body. The sinter precursor material is then sintered at a maximum processing temperature to produce a sinter bond layer bonding the prefabricated thermally-conductive body to the metallized sidewalls of the module substrate.

Microelectronic systems having embedded heat dissipation structures are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the steps or processes of obtaining a substrate having a tunnel formed therethrough, attaching a microelectronic component to a frontside of the substrate at a location covering the tunnel, and producing an embedded heat dissipation structure at least partially within the tunnel after attaching the microelectronic component to the substrate. The step of producing may include application of a bond layer precursor material into the tunnel and onto the microelectronic component from a backside of the substrate. The bond layer precursor material may then be subjected to sintering process or otherwise cured to form a thermally-conductive component bond layer in contact with the microelectronic component.

Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof

Microelectronic systems having integrated heat dissipation posts are disclosed, as are methods for fabricating such microelectronic systems. In various embodiments, the method includes the step or process of obtaining a microelectronic component from which a heat dissipation post projects. The microelectronic component is placed or seated on a substrate, such as a multilayer printed circuit board, having a socket cavity therein. The heat dissipation post is received in the socket cavity as the microelectronic component is seated on the substrate. Concurrent with or after seating the microelectronic component, the microelectronic component and the heat dissipation post are bonded to the substrate. In certain embodiments, the heat dissipation post may be dimensioned or sized such that, when the microelectronic component is seated on the substrate, the heat dissipation post occupies a volumetric majority of the socket cavity.

Microelectronic components having integrated heat dissipation posts, systems including the same, and methods for the fabrication thereof

A device includes a Doherty amplifier having a carrier path and a peaking path. The Doherty amplifier includes a carrier amplifier configured to amplify a signal received from the carrier path and a peaking amplifier configured to amplify a signal received from the peaking path. The device includes a variable impedance coupled to an output of the Doherty amplifier, and a controller configured to set the variable impedance to a first impedance when an output power level of the Doherty amplifier is less than a threshold and to a second impedance when the output power level of the Doherty amplifier is above the threshold.

Growing community of inventors

Tempe, AZ, United States of America

Geoffrey Tucker