Applied Materials, Inc.

Gtat Corporation

Twin Creeks Technologies, Inc.

Neutron Therapeutics Inc.

Axcelis Technologies, Inc.

Ibis Technology Corporation

Nova Associates, Inc.

Eaton Corporation

Varian Associates, Inc.

Orion Equipment, Inc.

Extrion Corporation

Geoffrey Ryding

Theodore H Smick

Marvin Farley

Takao Sakase

Shu Satoh

Adrian John Murrell

Ronald Horner

Paul Eide

Bernard F Harrison

Peter T Kindersley

Hilton Frank Glavish

Joseph Daniel Gillespie

Kenneth Harry Purser

Steven Richards

Peter Michael Banks

Drew Arnold

Peter Rose

William H Park, Jr

Peter I Edwards

William Park, Jr

William H Park

Craig J Lowrie

Peter Ivor Tudor Edwards

Robert Dolan

Bernhard Cordts

Victor M Benveniste

Bo H Vanderberg

Martin A Hilkene

Edward Eisner

Charles M Schott, Jr

Brian S Freer

William Leavitt

Kan Ota

Allen E Armstrong

John Ruffell

Robert J Mitchell

Bernhard F Cordts, Iii

Donald N Polner

Andrew B Wittkower

Gregory Robert Alcott

Matthew Peter Dobson

Robert S Andrews

Matthew D Castle

Mark Lambert

Donovan Beckel

Frank D Roberts

Christos Christou

Malcolm Barnett

Joeph Daniel Gillespie

Lee Spraggon

According to some embodiments, an electrostatic particle accelerator may include an assembly having a motor and support plate; an acceleration tube; one or more stage assemblies each having an alternator coupled to a common drive shaft, a power supply coupled to one of the plurality of electrodes, and an opening to receive a portion of the acceleration tube; a pressure vessel configured to enclose the acceleration tube when the pressure vessel is fastened to the support plate; and a circulator configured to pump high pressure gas into the pressure vessel. The acceleration tube can include an ion source, an extraction assembly, and a plurality of tube segments each having a plurality of electrodes and one or more power connectors attached to one of the electrodes.

Compact motor-driven insulated electrostatic particle accelerator

The present disclosures relates to an ion beam assembly where a relatively small deflection angle (approximately 15&#xb0; from the center of the beam line) is used in conjunction with two beam dumps located on either side of the beam. In some embodiments, the combination of the two beam dumps and the magnet assembly can provide an ion beam filter. In some embodiments, the resulting system provides a smaller, safer and more reliable ion beam. In some embodiments, the ion beam can be a proton beam.

Ion beam filter for a neutron generator

A system for controlling a high-power ion beam is disclosed, such as for steering, measuring, and/or dissipating the beam's power. In one embodiment, the ion beam can be controlled by being imparted into a cylindrical tube (e.g., a faraday cup), and deflected to strike an interior tube wall at an angle, thereby increasing an impact area of the beam on the wall. By also rotating the deflected beam around a circumference of the interior wall, the impact area of the ion beam may be further increased, thereby absorbing (dissipating) the high-power ion beam on the wall. In another embodiment, the ion beam may be passed through first, second, and third adjustable magnetic rings. By adjusting a relative angle between the rings and a combined rotation angle of all of the rings, a deflected ion beam may be rotated around a circumference of the interior wall of a power-absorbing tube, accordingly.

Systems for controlling a high power ion beam

Ion implant apparatus using a drum-type scan wheel holds wafers with a total cone angle less than 60&#xb0;. A collimated scanned beam of ions, for example H, is directed along a final beam path which is at an angle of at least 45&#xb0; to the axis of rotation of the scan wheel. Ions are extracted from a source and accelerated along a linear acceleration path to a high implant energy (more than 500 keV) before scanning or mass analysis. The mass analyzer may be located near the axis of rotation and unwanted ions are directed to an annular beam dump which may be mounted on the scan wheel.

Ion implant apparatus and a method of implanting ions

A d. c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In an embodiment, direct connections are provided to gap electrodes from the stage points of a multistage Cockcroft Walton type voltage multiplier circuit. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

D.C. charged particle accelerator and a method of accelerating charged particles

A d.c. charged particle accelerator comprises accelerator electrodes separated by insulating spacers defining acceleration gaps between adjacent pairs of electrodes. Individually regulated gap voltages are applied across each adjacent pair of accelerator electrodes. In embodiments, the individually regulated gap voltages are generated by electrically isolated alternators mounted on a common rotor shaft driven by an electric motor. Alternating power outputs from the alternators provide inputs to individual regulated d.c. power supplies to generate the gap voltages. The power supplies are electrically isolated and have outputs connected in series across successive pairs of accelerator electrodes. The described embodiment enables an ion beam to be accelerated to high energies and high beam currents, with good accelerator stability.

D. c. Charged particle accelerator, a method of accelerating charged particles using d. c. voltages and a high voltage power supply apparatus for use therewith

A voltage supply incorporates two voltage supplies connected in a mirror-image series arrangement to generate a DC voltage between the respective common terminals of the voltage supplies.

Mirror-image voltage supply

An ion implanter has an implant wheel with a plurality of wafer carriers distributed about a periphery of the wheel. Each wafer carrier has a heat sink for removing heat from a wafer on the carrier during the implant process by thermal contact between the wafer and the heat sink. The wafer carriers have wafer retaining fences formed as cylindrical rollers with axes in the respective wafer support planes of the wafer carriers. The cylindrical surfaces of the rollers provide wafer abutment surfaces which can move transversely to the wafer support surfaces so that no transverse loading is applied by the fences to wafer edges as the wafer is pushed against the heat sink by centrifugal force. The wafer support surfaces comprise layers of elastomeric material and the movable abutment surfaces of the fences allow even thermal coupling with the heat sink over the whole area of the wafer.

Ion implantation apparatus

An apparatus and a method of ion implantation using a rotary scan assembly having an axis of rotation and a periphery. A plurality of substrate holders is distributed about the periphery, and the substrate holders are arranged to hold respective planar substrates. Each planar substrate has a respective geometric center on the periphery. A beam line assembly provides a beam of ions for implantation in the planar substrates on the holders. The beam line assembly is arranged to direct said beam along a final beam path.

Ion implant apparatus and method of ion implantation

Multiple control electrodes are provided asymmetrically within the plasma chamber of an ion source at respective positions along the length of the plasma chamber. Biasing the control electrodes selectively can selectively enhance the ion extraction current at adjacent positions along the length of the extraction slit. A method of generating an ion beam is disclosed in which the strengths of the transverse electric fields at different locations along the length of the plasma chamber are controlled to modify the ion beam linear current density profile along the length of the slit. The method is used for controlling the uniformity of a ribbon beam.

Ion source and a method of generating an ion beam using an ion source

A sequence of series-connected transformers for transmitting power to high voltages incorporates an applied voltage distribution to maintain each transformer in the sequence below its withstanding voltage.

Isolation circuit for transmitting AC power to a high-voltage region

An ion implantation system configured to produce an ion beam is provided, wherein an end station has a robotic architecture having at least four degrees of freedom. An end effector operatively coupled to the robotic architecture selectively grips and translates a workpiece through the ion beam. The robotic architecture has a plurality of motors operatively coupled to the end station, each having a rotational shaft. At least a portion of each rotational shaft generally resides within the end station, and each of the plurality of motors has a linkage assembly respectively associated therewith, wherein each linkage assembly respectively has a crank arm and a strut. The crank arm of each linkage assembly is fixedly coupled to the respective rotational shaft, and the strut of each linkage assembly is pivotally coupled to the respective crank arm at a first joint, and pivotally coupled to the end effector at a second joint.

Low-inertia multi-axis multi-directional mechanically scanned ion implantation system

An ion beam angle calibration and emittance measurement system, comprising a plate comprising an elongated slit therein, wherein the elongated slit positioned at a rotation center of the plate and configured to allow a first beam portion to pass therethrough. A beam current detector located downstream of the plate, wherein the beam current detector comprises a slit therein configured to permit a second beam portion of the first beam portion to pass therethrough, wherein the beam current detector is configured to measure a first beam current associated with the first beam portion. A beam angle detector is located downstream of the beam current detector and configured to detect a second beam current associated with the second beam portion. The plate, the current beam detector and the beam angle detector are configured to collectively rotate about the rotation center of the plate.

Ion beam angle calibration and emittance measurement system for ribbon beams

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Manchester, MA, United States of America

Geoffrey Ryding