E.i. Dupont De Nemours and Company

University of California

Geoffrey Nunes

Jeffrey Scott Meth

Lynda Kaye Johnson

Reid John Chesterfield

Graciela Beatriz Blanchet

Feng Gao

Richard Kevin Bailey

Irina Malajovich

John W Catron, Jr

Kenneth George Sharp

Rinaldo Soria Schiffino

Roupen Leon Keusseyan

Thomas C Felder

Gerard O'Neil

Gary Delmar Jaycox

Marc Bruce Goldfinger

Jonathan V Caspar

Dalen E Keys

Nancy G Tassi

Elizabeth Forrester McCord

Howard David Glicksman

Gerald Donald Andrews

Richard Dale Kinard

Charles Nehemiah McEwen

William J Marshall

Mark Andrew Harmer

Robert Clayton Wheland

Michael Roukes

Paul J Shannon

Peter Francis Carcia

Hong Meng

Karyn B Visscher

Robert Scott McLean

Kirstin H Shilkitus

Melissa M Midzor

P Chris Hammel

Denis V Pelekhov

An apparatus for atomic layer deposition of a material on a moving substrate comprises a conveying arrangement for moving a substrate along a predetermined planar or curved path of travel and a coating bar having at least one precursor delivery channel. The precursor delivery channel conducts a fluid containing a material to be deposited on a substrate toward the path of travel. When in use, a substrate movable along the path of travel defines a gap between the outlet end of the precursor delivery channel and the substrate. The gap defines an impedance Zto a flow of fluid from the precursor delivery channel. A flow restrictor is disposed within the precursor delivery channel that presents a predetermined impedance Zto the flow therethrough. The restrictor is sized such that the impedance Zis at least five (5) times, and more preferably at least fifteen (15) times, the impedance Z. The impedance Zhas a friction factor f. The restrictor in the precursor delivery channel is sized such that the impedance Zhas a friction factor f that is less than 100, and preferably less than 10.

Apparatus for atomic layer deposition on a moving substrate

A vapor deposition apparatus includes an insert within which a material is deposited on the surface of a film. A cassette includes end plates each having a rib that edgewise receive a spiral wrapping of a film at least 300 mm wide. Spaces between turns of the wrapping define a gas flow channel and spaces between adjacent turns of one rib define inlet openings that communicate with the channel. Each rib has a predetermined width dimension, a predetermined average thickness dimension, and a width-to-thickness aspect ratio of at least 2:1. The spacing between end plates is at least 300 mm and is also greater than the film width at deposition temperature. The width dimension of each rib is between about 0.5% to about 2.0% of the end plate spacing. A diverging flow director contacts one end plate to directing gaseous fluid toward the inlet openings in that end plate.

Apparatus for gaseous vapor deposition

Thermal imaging donors are useful for thermal transfer patterning of a metal layer and optionally, a corresponding proximate portion of an additional transfer layer onto a thermal imaging receiver. The compositions are useful for dry fabrication of electronic devices. Also provided are patterned multilayer compositions comprising one or more base film(s), and one or more patterned metal layers. These include electromagnetic interference shields and touchpad sensors.

Metal compositions, thermal imaging donors and patterned multilayer compositions derived therefrom

The present invention relates to an apparatus to measure permeation of a gas through a membrane. The membrane is mounted on a flange with two sealing areas. The region between the sealing areas defines an annular space. The annular space is swept with a gas in order to carry away any of the permeating gas which may leak through the sealing areas.

Apparatus to measure permeation of a gas through a membrane

The invention is related to thermal imageable dielectric layers and thermal transfer donors and receivers comprising dielectric layers. The thermal transfer donors are useful in making electronic devices by thermal transfer of dielectric layers having excellent resistivity, good transfer properties and good adhesion to a variety of receivers.

Thermally imageable dielectric layers, thermal transfer donors and receivers

The invention discloses processes for thermal transfer patterning of a nanoparticle layer and a corresponding proximate portion of a carrier layer, and optionally additional transfer layers, together onto a thermal imaging receiver. The invention is useful for dry fabrication of electronic devices. Additional embodiments of the invention include multilayer thermal imaging donors comprising in layered sequence: a base film, a carrier layer and a nanoparticle layer. The carrier layer can be a dielectric or conducting layer. When the carrier layer is a dielectric layer, the base film includes a light attenuating agent in the form of a dye or pigment.

Donor elements and processes for thermal transfer of nanoparticle layers

Metal compositions including silver compositions are used in preparing thermal imaging donors. The donors are useful for thermal transfer patterning of a metal layer and optionally, a corresponding proximate portion of an additional transfer layer onto a thermal imaging receiver. The compositions are useful for dry fabrication of electronic devices. Also provided are patterned multilayer compositions comprising one or more base film(s), and one or more patterned metal layers, including EMI shields and touchpad sensors.

The invention provides metal compositions, including silver compositions, and thermal imaging donors prepared with the compositions. The donors are useful for thermal transfer patterning of a metal layers and optionally, a corresponding proximate portion of an additional transfer layer onto a thermal imaging receiver. The compositions are useful for dry fabrication of electronic devices. Also provided are patterned multilayer compositions comprising one or more base film(s), and one or more patterned metal layers, including EMI shields and touchpad sensors.

The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.

Thin film transistor comprising novel conductor and dielectric compositions

This invention relates to processes useful for fabricating electronic devices, more particularly to a process for laminating a layer of dielectric material onto a semiconductor.

Process for laminating a dielectric layer onto a semiconductor

A method for coating the tip of a mechanical resonator for use in magnetic force microscopy and magnetic resonance force microscopy in which the tip is coated with a ferromagnetic material and the cantilever is not, and the product resulting from the method. A cantilever and incorporated tip are coated with a photoresist, except that surface tension keeps photoresist off the tip. The cantilever and tip are then coated with a magnetic material. Next, acetone is used to lift off the magnetic material from the cantilever but not from the tip.

Technology for fabrication of a micromagnet on a tip of a MFM/MRFM probe

Growing community of inventors

Swarthmore, PA, United States of America

Geoffrey Nunes