Element Six Technologies Limited

Element Six Gmbh

Other

Diamond Microwave Devices Limited

Electrolytic Ozone, Inc.

Geoffrey Alan Scarsbrook

Daniel James Twitchen

Christopher John Howard Wort

Geoffrey John Davies

Philip Maurice Martineau

Andrew John Whitehead

Ian Friel

John Robert Brandon

Herman Philip Godfried

Clive Edward Hall

Evert Pieter Houwman

Michael Andrew Cooper

Steven Edward Coe

Timothy Peter Mollart

Matthew Lee Markham

John Lloyd Collins

Ricardo Simon Sussmann

Wilhelmus Gertruda Maria Nelissen

Barbel Susanne Dorn

Joseph Michael Dodson

Mark Edward Newton

Charles Simon James Pickles

Jonathan James Wilman

Richard Stuart Balmer

Patrick Robert Unwin

Julie Victoria MacPherson

Alexander Lamb Cullen

Neil Perkins

Sarah Louise Geoghegan

Bärbel Susanne Charlotte Dorn

Barbel Susanne Charlotte Dorn

Paul Martyn Spear

Carlton Nigel Dodge

Stephen David Williams

Laura Anne Hutton

Paul Nicolas Inglis

Chee-Leong Lee

Erdan Gu

William Joseph Yost, Iii

Martin David Dawson

Christopher John Wort

Andrew Michael Bennett

Harpreet Kaur Dhillon

Mark Robin McClymont

Gerrit Jan Pels

Erhard Kohn

Michael Cooper

Julie Victoria Macpherson

Christopher Wort

Josquin Pfaff

Andrew David Garry Stewart

Wilhemus Gertruda Maria Nelissen

William Joseph Yost

Wilhelmus Gerarda Maria Nelissen

Paulus Adrianus Cornelis Kriele

Ben Llewlyn Green

Johannes Cornelis Lamers

Bartholomeus Mathias Van Oerle

Paulus Geradus Hendricus Maria Spaay

Michael Schwitters

Ricardo Simon Sussman

Jaswinder Singh Gill

Charles Simon Pickles

Andrew Michael Cooper

Wilhelmus Gertruda Nelissen

Teresa Rodriguez Suarez

Maria Louise Cann

Daniel Twitchen

William Joseph Yost Iii

Bärbel Susanne Cha Dorn

Clint Guy Smallman

Rizwan Khan

Katharine Robertson

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor includes a plasma chamber, a substrate holder, a microwave coupling configuration for feeding microwaves into the plasma chamber, and a gas flow system for feeding process gases into the plasma chamber and removing them therefrom. The gas flow system includes a gas inlet array having a plurality of gas inlets for directing the process gases towards the substrate holder. The gas inlet array includes at least six gas inlets disposed in a substantially parallel or divergent orientation relative to a central axis of the plasma chamber.

Microwave plasma reactor for manufacturing synthetic diamond material

A CVD single crystal diamond material suitable for use in, or as, an optical device or element. It is suitable for use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons. The CVD diamond material is produced by a CVD method in the presence of a controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics for optical applications.

Optical quality diamond material

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising: a plasma chamber defining a resonant cavity for supporting a primary microwave resonance mode having a primary microwave resonance mode frequency f; a plurality of microwave sources coupled to the plasma chamber for generating and feeding microwaves having a total microwave power P&#x3c4; into the plasma chamber; a gas flow system for feeding process gases into the plasma chamber and removing them therefrom; and a substrate holder disposed in the plasma chamber and comprising a supporting surface for supporting a substrate on which the synthetic diamond material is to be deposited in use, wherein the plurality of microwave sources are configured to couple at least 30% of the total microwave power P&#x3c4; into the plasma chamber in the primary microwave resonance mode frequency f, and wherein at least some of the plurality of microwave sources are solid state microwave sources.

A method of fabricating plates of super-hard material and cutting techniques suitable for such a method. A method of fabricating a plate () of super-hard material, the method comprising: &#x2022;providing a substrate () have a lateral dimension of at least 40 mm; &#x2022;growing a layer of super-hard material on the substrate () using a chemical vapor deposition process; and &#x2022;slicing one or more plates () of super-hard material from the substrate using a collimated cutting beam (), the or each plate of super-hard material () having a lateral dimension of at least 40 mm, wherein the collimated cutting beam () is collimated with a half angle divergence of no more than 5 degrees.

Method of fabricating plates of super-hard material using a collimated cutting beam

A polycrystalline CVD diamond material comprising a surface having a surface roughness Rof less than 5 nm, wherein said surface is damage free to the extent that if an anisotropic thermal revealing etch is applied thereto, a number density of defects revealed by the anisotropic thermal revealing etch is less than 100 per mm.

Plasma etching of diamond surfaces

A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapour deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

Single crystal diamond

The present disclosure relates to substrates for use in microwave plasma reactors. Certain substrates include a cylindrical disc of a carbide forming refractory metal having a flat growth surface on which CVD diamond is to be grown and a flat supporting surface opposed to said growth surface. The cylindrical disc may have a diameter of 80 mm or more. The growth surface may have a flatness variation no more than 100 mm The supporting surface may have a flatness variation no more than 100 mm.

Microwave plasma reactors and substrates for synthetic diamond manufacture

Disclosed herein are methods of manufacturing synthetic CVD diamond material including orienting and controlling process gas flow in a microwave plasma reactor to improve performance. The microwave plasma reactor includes a gas flow system with a gas inlet comprising one or more gas inlet nozzles disposed opposite the growth surface area and configured to inject process gases towards the growth surface area. The method comprises injecting process gases towards the growth surface area at a total gas flow rate equal to or greater than 500 standard cmper minute wherein the process gases are injected into the plasma chamber through the one or more gas inlet nozzles with a Reynolds number in a range 1 to 100.

Methods of manufacturing synthetic diamond material by microwave plasma enhanced chemical vapor deposition from a microwave generator and gas inlet(s) disposed opposite the growth surface area

A method of producing a large area plate of single crystal diamond from CVD diamond grown on a substrate substantially free of surface defects by chemical vapor deposition (CVD). The homoepitaxial CVD grown diamond and the substrate are severed transverse to the surface of the substrate on which diamond growth took place to produce the large area plate of single crystal CVD diamond.

A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a Tat room temperature of about 300 &#x3bc;s or more and wherein the host material comprises a layer of single crystal CVD diamond having a total nitrogen concentration of about 20 ppb or less, wherein the surface roughness, Rof the single crystal diamond within an area defined by a circle of radius of about 5 &#x3bc;m centered on the point on the surface nearest to where the quantum spin defect is formed is about 10 nm or less, methods for preparing solid state systems and the use of single crystal diamond having a total nitrogen concentration of about 20 ppb or less in spintronic applications are described.

Solid state material

A microwave plasma reactor for manufacturing synthetic diamond material via chemical vapour deposition, the microwave plasma reactor comprising:

Single crystal diamond having a high chemical purity i.e. a low nitrogen content and a high isotopic purity i.e. a lowC content, methods for producing the same and a solid state system comprising such single crystal diamond are described.

Diamond material

A synthetic single crystal diamond material comprising: a first region comprising electron donor defects; a second region comprising quantum spin defects; and a third region between the first and second regions. The second and third regions have a lower concentration of electron donor defects than the first region. The first and second regions are sufficiently close to allow electrons to be donated from the first region to the second region, thus forming negatively charged quantum spin defects in the second and positively charged defects in the first region, and sufficiently far apart to reduce other coupling interactions between the first and second regions which would otherwise unduly reduce the decoherence time of the plurality of quantum spin defects and/or produce strain broaden of a spectral line width of the plurality of quantum spin defects in the second region.

Diamond sensors, detectors, and quantum devices

Growing community of inventors

Ascot, United Kingdom

Geoffrey Alan Scarsbrook