Freescale Semiconductor,inc.

Geoffrey (Choh-Fei) Yeap

Laegu Kang

Sangwoo Lim

A multiple gate oxidation process is provided. The process comprises the steps of (a) providing a silicon substrate () having a sacrificial oxide layer () thereon; (b) depositing and patterning a first layer of photoresist () on the sacrificial oxide layer, thereby forming a first region in which the sacrificial oxide layer is exposed; (c) etching the exposed sacrificial oxide layer within the first region, thereby forming a first etched region; (d) growing a first oxide layer () within the first etched region; (e) depositing and patterning a second layer of photoresist () on the sacrificial oxide layer and first oxide layer, thereby forming a second region in which the sacrificial oxide layer is exposed; (f) etching the exposed sacrificial oxide layer within the second region, thereby forming a second etched region; and (g) growing a second oxide layer () within the second etched region.

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San Diego, CA, United States of America

Geoffrey (Choh-Fei) Yeap