Canon Kabushiki Kaisha

Genzo Monma

Takeshi Ichikawa

Mamoru Miyawaki

Osamu Ikeda

Shunsuke Inoue

Shin Kikuchi

Hayao Ohzu

Yoshio Nakamura

Tetsunobu Kohchi

Hiroshi Yuzurihara

Yukihiro Hayakawa

Takahiko Okabe

Yasuhiro Sekine

Shigeyuki Matsumoto

Kei Fujita

Yutaka Akino

Yasuhiro Naruse

Seiji Kamei

Masato Kamiichi

A structure is constructed having a through hole in a substrate of silicon or the like by a decreased number of steps in production and with improved reliability. A silicon nitride film is formed in contact with an upper surface of a silicon oxide film at least on a portion of the substrate near the edge of a through hole, thereby improving step coverage of the silicon nitride film. The silicon oxide film and silicon nitride film function as a membrane during formation of the through hole by etching from the back side of the substrate.

Structure with through hole, production method thereof, and liquid discharge head

A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

Method of manufacturing a surrounding gate type MOSFET

An alignment method for a semiconductor device having a conductive thin film on a conductive substrate surface across an insulation film, comprises steps of: forming in the insulation film, at least two apertures exposing the substrate surface therein; selectively depositing a conductive material in the apertures thereby forming a stepped portion in at least one of said apertures; and forming the conductive thin film at least on said insulation film. The alignment is conducted utilizing the stepped portion.

Method for producing semiconductor device having alignment mark

Semiconductor device with a contact member made of semiconductor

An alignment method for a semiconductor device having a conductive thin film on a conductive substrate surface across an insulation film, comprises steps of:

Semiconductor device and method of manufacturing the same

A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.

Substrate for recording head, recording head and method for producing

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Hiratsuka, Japan

Genzo Monma