Hitachi, Ltd.

Nippon Telegraph and Telephone Corporation

Nippon Telegraph and Telephone Public Corporation

Genya Matsuoka

Hiroyoshi Ando

Hiroyuki Takahashi

Masahide Okumura

Norio Saitou

Takashi Matsuzaka

Hidenori Yamaguchi

Teruo Iwasaki

Hideo Todokoro

Yasunari Sohda

Yoshinori Nakayama

Takashi Inoue

Hitoshi Yokono

Yoshitada Oshida

Katsuhiro Kuroda

Hiroyuki Itoh

Yasuhiro Someda

Satoru Fukuhara

Hidetoshi Satoh

Hideo Arima

Hidetaka Shigi

Yasuo Kato

Toshio Kaneko

Tadahito Matsuda

Katsuhiro Kawasaki

Tsuneo Okubo

Kazumi Iwadate

Yoshinori Minamide

Ryoichi Yamaguchi

An electron beam apparatus used in a cell projection method has a system for correcting the electron optics. A figured electron beam that has been passed through a cell having a complex figure shape is directed onto a stage on which a substrate is positioned. A fine hole is formed in the substrate and an electron detector is positioned underneath the fine hole to receive the electrons that pass through the fine hole. The output signal of the electron detector is processed to provide a representation of the degree of focus and astigmatism correction of the electron optics. When a line and space pattern is used to shape the electron beam, the output signal from the electron detector has a series of peak intensity values that, when maximized, indicate an optimum correction of the electron optics. Optionally, a limited aperture is positioned between the substrate having a fine hole and the electron detector to limit the detection of scattered electrons that have not passed through the fine hole.

Electron beam lithography apparatus having electron optics correction

A sample stage is moved so that an alignment mark on a wafer successively move on positions symmetric to the positional origin of the electron beam, and waveformes of signals obtained by scanning the alignment mark at the symmetric positions with electron beam are added each other so as to be symmetry and decrease the alignment-mark position detecting error.

Electron beam lithography method

A lithographic method and a lithographic apparatus ar disclosed in which the height of a silicon wafer making up an object of lithography is accurately measured. A lithographic apparatus such as an electron beam apparatus having a height-measuring instrument built therein is effectively used for forming a pattern on the order of submicrons.

Lithographic apparatus and method

An electron beam lithography apparatus, comprising an electron beam source for irradiating an electron beam on a specimen surface, a deflectional controller of the electron beam, a focal controller of the electron beam on the specimen surface, a light source which irradiates two monochromatic lights on the surface having wavelengths which are different a half thereof each other, a signal processor for obtaining correction values in a height direction of the beam based on the reflected lights from the surface, and a means for adjusting the focal controller according to the correction values in the height direction. As the wavelengths of the two monochromatic lights on the surface are different in a half wavelength each other, an interference caused by a photo-resist on the specimen is prevented.

Electron beam lithography system

A thick and thin film hybrid multilayer wiring substrate includes an adjustment layer provided between a thick film circuit and a thin film circuit in order to adjust positions of the thick film circuit and the thin film circuit with high integration and large area of the thick and thin film hybrid substrate. The adjustment layer is formed using a direct printing process in accordance with dispersion of the shape of the thick film circuit substrate to absorb the dispersion of the substrate. Further, in order to absorb dispersion of contraction of the thick film substrate due to sintering, a position of a mark provided on the substrate is detected by an electron beam and thereafter a connection pattern is formed to be connected to a regular pattern.

Method and apparatus of fabricating electric circuit pattern on thick

A mark position detection system used in a charged particle beam apparatus and including detection circuit for detecting a reflected electron generated at a mark when the mark is scanned with a charged particle beam, to obtain a mark signal, and signal processing circuit for comparing the mark signal from the detection circuit with a predetermined threshold level to find the position of the charged particle beam at a time the mark signal traverses the threshold level, thereby detecting the position of a mark edge, is disclosed in which, when the mark signal traverses the threshold level and has a peak value exceeding a predetermined value, it is determined by the signal processing circuit that the position of the charged particle beam at a time point at which the mark signal traverses the threshold level is the position of the mark.

Mark position detection system for use in charged particle beam apparatus

Disclosed is an electron beam exposure apparatus which includes an objective lens focusing an electron beam, and a dynamic focus correction lens dynamically correcting the focusing by the objective lens. The apparatus comprises a control circuit which, in order to prevent a current variation induced in the objective lens by the dynamic focus correction lens, controls current supplied to the objective lens so as to cancel the current variation induced in the objective lens due to the coil current of the dynamic focus correction lens.

Electron beam exposure apparatus

A method of measuring the diameter of an electron beam in which the electron beam diameter is measured from the leading edge or trailing edge of a detector signal that is obtained as the mark area formed on the specimen is scanned by the electron beam. This method comprises the following steps: scanning the specimen by the electron beam at least once to find the maximum and minimum values of the detector signal; setting two threshold levels based on the maximum and minimum values; scanning the mark area by the electron beam to measure the time interval during which the level of the detector signal is within the two threshold levels; and calculating the beam diameter.

Method and system for measuring the diameter of an electron beam

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Ome, Japan

Genya Matsuoka