Fujitsu Semiconductor Limited

Genshi Okuda

Tetsuya Takeuchi

Hiromichi Ichikawa

Tomiyasu Saito

Tatsuya Mise

A method of fabricating a semiconductor device includes forming a first insulation film over a semiconductor substrate, the semiconductor substrate including an outer region and an inner region located at an inner side of the outer region, forming a first wiring over the first insulation film in the inner region, forming a second insulation film over the first wiring and over the first insulation film, decreasing a film thickness of the second insulation film in the inner region with regard to a film thickness of the second insulation film in the outer region, and polishing the second insulation film after the decreasing of the film thickness of the second insulation film.

Growing community of inventors

Yokohama, Japan

Genshi Okuda