Semiconductor Components Industries, LLC

Gennadiy Nemtsev

Yingping Zheng

Rajesh S Nair

Hui Wang

Gordon M Grivna

A semiconductor component that includes a field plate and a semiconductor device and a method of manufacturing the semiconductor component. A semiconductor material includes an epitaxial layer disposed on a semiconductor substrate. A trench having an upper portion and a lower portion is formed in the epitaxial layer. A portion of a field plate is formed in the lower portion of the trench, wherein the field plate is electrically isolated from trench sidewalls. A gate structure is formed in the upper portion of the trench, wherein a gate oxide is formed from opposing sidewalls of the trench. Gate electrodes are formed adjacent to the gate oxide formed from the opposing sidewalls and a dielectric material is formed adjacent to the gate electrode. Another portion of the field plate is formed in the upper portion of the trench and cooperates with the portion of the field plate formed in the lower portion of the trench to form the field plate.

Method for manufacturing a semiconductor component that includes a field plate

An EPROM cell includes a control gate and a control transistor. A portion of the control transistor is formed as a portion of the control gate.

Method of forming an EPROM cell and structure therefor

A transistor () is formed as a matrix of transistor cells () that have drain metal strips () for contacting drains () of the transistor cells and source metal strips () for contacting sources () of the transistor cells. An interconnect layer () overlying the matrix of transistor cells has first portions () that contact one the drain metal strips with first and second vias () and second portions () that contact one of the source metal strips with third and fourth vias ().

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Stoughton, MA, United States of America

Gennadiy Nemtsev