Kabushiki Kaisha Toshiba

Genichi Hatakoshi

Masayuki Ishikawa

Kazuhiko Itaya

Shinji Saito

Shinya Nunoue

Masaaki Onomura

Hidetoshi Fujimoto

John Rennie

Yukie Nishikawa

Masahiro Yamamoto

Koichi Nitta

Mariko Suzuki

Masaki Okajima

Yukio Watanabe

Hideto Sugawara

Yutaka Uematsu

Yasushi Hattori

Johji Nishio

Yoshihiro Kokubun

Hajime Okuda

Hideo Shiozawa

Naomi Shida

Peter James Parbrook

Shigeya Naritsuka

Minoru Watanabe

Hideto Furuyama

Yasuo Ohba

Hiroaki Yoshida

Koichi Tachibana

Kazutaka Terashima

Mamoru Terauchi

Hajime Nago

Junichi Akiyama

Katsutaro Ichihara

Kei Kaneko

Iwao Mitsuishi

Haruhiko Okazaki

Nawoto Motegi

Atsushi Kamata

Norio Iizuka

Chiharu Nozaki

Masaru Kawachi

Katsunobu Sasanuma

Mikio Nakasuji

Risa Sugiura

Sinya Nunoue

A semiconductor light-emitting element including a semiconductor substrate having a first surface and second surface faced on the opposite side of the first surface, the semiconductor substrate having a recessed portion formed in the first surface, and the recessed portion having a V-shaped cross-section, a reflecting layer formed on an inner surface of the recessed portion, a first electrode formed on the reflecting layer, a light-emitting layer formed on the second surface, and a second electrode formed on the light-emitting layer.

Semiconductor light-emitting element and manufacturing method thereof

A light-emitting device is provided, which includes a substrate having a plane surface, a semiconductor light-emitting element mounted on the plane surface of the substrate and which emits light in a range from ultraviolet ray to visible light, a first light transmissible layer formed above the substrate and covering the semiconductor light-emitting element, a phosphor layer formed above the first light transmissible layer and containing phosphor particles and matrix, and a second light transmissible layer formed above the phosphor layer and contacting with the plane surface of the substrate. The surface of the phosphor layer has projections reflecting shapes of the phosphor particles.

Semiconductor light-emitting device

A light emitting device includes a light emitting element emitting an excitation light and a fluorescent element. The fluorescent element includes a semi-translucent film facing the light emitting element, and transmits the excitation light; a first luminescent film including phosphors to absorb the excitation light transmitted through the semi-translucent film and to emit a visible light having a different wavelength than the excitation light; and a reflection film disposed on an opposite side of the first luminescent film on which the semi-translucent film is disposed, reflecting the excitation light transmitted through the first luminescent film towards the first luminescent film.

Light emitting device

A semiconductor light emitting element includes: an {0001} n-type semiconductor substrate formed of a III-V semiconductor, which is in a range of 0&#xb0; to 45&#xb0; in inclination angle into a &#x3c;1-100&#x3e; direction, and which is in a range of 0&#xb0; to 10&#xb0; in inclination angle into a &#x3c;11-20&#x3e; direction; an n-type layer formed of a III-V semiconductor on the n-type semiconductor substrate; an n-type guide layer formed of a III-V semiconductor above the n-type layer; an active layer formed of a III-V semiconductor above the n-type guide layer; a p-type first guide layer formed of a III-V semiconductor above the active layer; a p-type contact layer formed of a III-V semiconductor above the p-type first guide layer; and an concavo-convex layer formed of a III-V semiconductor between the p-type first guide layer and the p-type contact layer. The concavo-convex layer has concave portions and convex portions which are alternately and regularly arranged at a top face thereof, and has lower p-type impurity concentration than that of the p-type contact layer.

Semiconductor light emitting element

A semiconductor light emitting element includes a semiconductor light emitting element emitting light beams in ultraviolet ranges and visible ranges, and a fluorescent element absorbing the light beams from the semiconductor light emitting element and outputting visible light beams in a light taking-out direction different from a light emitting direction. The light beams emitted from the light emitting element are absorbed within the semiconductor light emitting device.

Semiconductor light emitting device

Disclosed is an optical probe for obtaining a micro spot light, comprising a rod-like glass body having a rectangular cross section as a core for propagating an light wave. The distal end portion of the glass body is gradually diminished toward the distal end so as to form a micro distal end face having a small diameter. The side surface of the distal end portion of the glass body in a direction perpendicular to the polarized direction of the light wave is coated with a light absorber formed of a metal film.

Optical probe and optical pick-up apparatus

A thermally-assisted magnetic recording head and a magnetic recording apparatus having the magnetic recording head built in are disclosed. The magnetic recording head is capable of recording magnetic information by heating a recording unit of a recording medium and raising its temperature to reduce magnetic coercive force and then applying recording magnetic field to the recording unit having the reduced coercive force. The magnetic recording head has a light absorbing film having an aperture, a laser device emitting and directing light through the aperture to the recording medium to head the recording unit and raise its temperature, and a recording magnetic pole for applying the recording magnetic field to the recording unit. In the aperture, an aperture width W1 is along a polarizing direction of the light emitted from the laser device while an aperture width W2 is approximately perpendicular to the polarizing direction of the aperture width W1, and the aperture width W1 is shorter than the aperture width W2. The heating source such as a laser device recedes from the medium to provide a unique configuration where a tip of the recording magnetic pole protrudes ahead of the heating source, and hence, heating beam and the recording magnetic pole can be located close to each other without losing sufficient energy density to heat the medium.

Thermally-assisted magnetic recording head, method of manufacturing the same, and thermally-assisted magnetic recording apparatus

Disclosed is an optical probe for obtaining a micro spot light, comprising a rod-like glass body having a rectangular cross section as a core for propagating a light wave. The distal end portion of the glass body is gradually diminished toward the distal end so as to form a micro distal end face having a small diameter. The side surface of the distal end portion of the glass body in a direction perpendicular to the polarized direction of the light wave is coated with a light absorber formed of a metal film.

This invention provides a light-emitting element that comprises a light-emitting portion made of a nitride semiconductor; and a first wavefront converter for converting the radiated shape of light that is emitted from the light-emitting portion into a radiated shape that is smaller than the wavelength thereof, and emitting the same as output light. In this case, the first wavefront converter has a small aperture of a diameter that is smaller than the wavelength of light that is emitted from the light-emitting portion. If the output light is made to comprise an evanescent wave that is emitted to the exterior through this small aperture, it is possible to obtain an extremely small light spot. This invention also relates to a surface-emitting type of light-emitting element comprising a multi-layered structure comprising a light-emitting layer; and a pair of electrodes for supplying a current to the light-emitting layer; wherein output light is emitted from a light-emitting surface on top of the multi-layered structure; and the pair of electrodes are recessed from the light-emitting surface to the light-emitting layer side. This makes it possible to bring the light-emitting surface extremely close to an object to be illuminated. The small aperture can be opened up in a self-aligning manner by using the light from the light-emitting portion. As a result, it is possible to provide a light-emitting element and a method of fabrication thereof that create beam characteristics that are suitable for use with an optical disc or the like.

Light-emitting element and method of fabrication thereof

Disclosed is a semiconductor laser device capable of minimizing the spot diameter of a laser light and also capable of improving the transmittance of light passing through a fine aperture. The semiconductor laser device comprises a light absorption film provided with a fine aperture on the outside of the light-emitting surface of the semiconductor laser element. The aperture is formed such that the aperture width W in a direction parallel to the polarizing direction of the laser light is smaller than half the oscillation wavelength of the semiconductor laser element, and the aperture width W in a direction perpendicular to the polarizing direction is larger than the aperture width W .

Semiconductor laser device

Light emitting element and method of fabrication thereof

A semiconductor laser is disclosed, which realizes a continuous oscillation in a fundamental transverse mode at a low operating voltage by a transverse mode control. This semiconductor laser is fabricated by forming successively the following layers on a sapphire substrate in the order an n-type GaN contact layer, an n-type GaAlN cladding layer , an MQW active layer , a p-type GaAlN cladding layer , wherein the laser comprises a double heterostructure including a ridge in the shape of a stripe formed in the cladding layer and a light confining layer formed in a region except the ridge portion of the cladding layer on the double heterostructure, wherein a refractive index of the light confining layer is larger than that of a p-type GaAlN cladding layer.

Semiconductor laser and method of fabricating same

A gallium nitride-based compound semiconductor laser has a double-heterojunction structure, in which an active layer is sandwiched between cladding layers, on a sapphire substrate. A GaN current blocking layer having a striped opening portion is formed on the p-cladding layer. A p-GaN buried layer and a contact layer through which a current is injected into the opening portion of the current blocking layer and which are larger in area than the opening portion are formed. The active layer has a multiple quantum well structure constituted by a cyclic structure formed by cyclically stacking two types of InGaAlN layers which have different band gaps and are 10 nm or less thick.

Gallium nitride-based compound semiconductor laser and method of manufacturing the same

A semiconductor laser is formed of gallium nitride series compound semiconductor and has a double hetero structure including an MQW (multiple quantum well) active layer held between p-type and n-type AlGaN clad layers. The double hetero structure is held between p-type and n-type contact layers. An InGaN optical absorption layer having an optical absorption coefficient larger than the clad layer which has the same conductivity type as the contact layer and is formed adjacent to the contact layer is formed in at least one of the contact layers and an InAlGaN optical guided mode control layer (layer of small refractive index) having an refractive index smaller than the clad layer is formed on the exterior of the optical absorption layer.

Semiconductor laser using gallium nitride series compound semiconductor

Growing community of inventors

Yokohama, Japan

Genichi Hatakoshi