Globalfoundries Inc.

Genevieve Beique

Lei Sun

Shao Beng Law

Xunyuan Zhang

Frank Wilhelm Mont

Francis Goodwin

Nicholas V Licausi

Sean Xuan Lin

Rui Chen

Yuping Ren

Obert Reeves Wood, Ii

Minghao Tang

Yulu Chen

Erik A Verduijn

Erik Verduijn

Xun Xiang

The present disclosure relates to semiconductor structures and, more particularly, to an extreme ultraviolet (EUV) lithography mask and methods of manufacture. The EUV mask structure includes: a reflective layer; a capping material on the reflective layer; a buffer layer on the capping layer; alternating absorber layers on the buffer layer; and a capping layer on the top of the alternating absorber layers.

Extreme ultraviolet (EUV) lithography mask

The disclosure is directed to methods of identifying a space within an integrated circuit structure as a mandrel space or a non-mandrel space. One method may include: identifying a space between freestanding spacers as being one of: a former mandrel space created by removal of a mandrel from between the freestanding spacers or a non-mandrel space between adjacent mandrels prior to removal of the mandrel, based on a line width roughness of the space, wherein the line width roughness represents a deviation of a width of the space from a centerline axis along a length of the space.

Methods of identifying space within integrated circuit structure as mandrel space or non-mandrel space

Methods of self-aligned multiple patterning. A mandrel line is formed over a hardmask layer, and forming a block mask is formed over a first portion of the mandrel line that is linearly arranged between respective second portions of the mandrel line. After forming the first block mask, the second portions of the mandrel line are removed with an etching process to cut the mandrel line and expose respective portions of the hardmask layer. A second portion of the mandrel line is covered by the block mask during the etching process to define a mandrel cut in the mandrel line.

Multiple patterning with mandrel cuts formed using a block mask

The present disclosure relates to semiconductor structures and, more particularly, to post spacer self-aligned cut structures and methods of manufacture. The method includes: providing a non-mandrel cut; providing a mandrel cut; forming blocking material on underlying conductive material in the non-mandrel cut and the mandrel cut; forming trenches with the blocking material acting as a blocking mask at the mandrel cut and the non-mandrel cut; and filling the trenches with metallization features such that the metallization features have a tip to tip alignment.

Post spacer self-aligned cuts

Methods of lithographic patterning. A metal hardmask layer is formed on a dielectric layer and a patterned layer is formed on the metal hardmask layer. A metal layer is formed on an area of the metal hardmask layer exposed by an opening in the patterned layer. After the metal layer is formed, the patterned layer is removed from the metal hardmask layer. After the patterned layer is removed, the metal hardmask layer is patterned with the metal layer masking the metal hardmask layer over the area.

Self-aligned lithographic patterning

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Clifton Park, NY, United States of America

Genevieve Beique