United States of America as Represented by the Secretary of the Air Force

Gene P Siegel

Michael R Snure

Badri Narayanan

Qing S Paduano

Cristian Ciobanu

Catalin S Badescu

A method of forming a spboron nitride (BN) layer on a surface of a substrate, the method comprising providing first and second precursors at the surface of the substrate, the first precursor being a source of boron and the second precursor being a source of nitrogen; heating the substrate to a temperature greater than a pyrolysis point for either of the first and second precursors; pyrolyzing the first precursor at the surface of the substrate; activating the second precursor at the surface of the substrate with the pyrolyzed first precursor; and adsorbing the pyrolyzed first precursor and the activated second precursor onto the surface of the substrate.

Growing two-dimensional materials through heterogeneous pyrolysis

A semiconductor device includes a mechanical release layer, such as a van der Waals buffer layer, with a predetermined material roughness and thickness adjacent to a first substrate; a nucleation layer adjacent to the mechanical release layer; and a first semiconductor layer attached to the nucleation layer. The first semiconductor layer, the nucleation layer, and a portion of the mechanical release layer are releasably connected to the first substrate. The predetermined material roughness and thickness of the mechanical release layer determines a bonding strength of the first semiconductor layer to the first substrate. The semiconductor device may include an aluminum nitride insert layer adjacent to the first semiconductor layer; an aluminum gallium nitride barrier layer adjacent to the aluminum nitride insert layer; and a second semiconductor layer adjacent to the aluminum gallium nitride barrier layer. The semiconductor device may include a second substrate attached to the released first semiconductor layer.

Growing community of inventors

Beavercreek, OH, United States of America

Gene P Siegel