Air Products and Chemicals, Inc.

Versum Materials Us, LLC

Parris, Gene E.

Gene Everad Parris

Tianniu Chen

Yi-Chia Lee

Madhukar Bhaskara Rao

Wen Dar Liu

David Barry Rennie

John N Armor

William Jack Casteel, Jr

Ronald Pierantozzi

Aiping Wu

Dnyanesh Chandrakant Tamboli

Peng Zhang

Gautam Banerjee

Leslie Cox Barber

Hoshang Subawalla

Rajkumar Ramamurthi

Bridgette Maria Budhlall

Francis Joseph Waller

Wayne Thomas McDermott

Xiang-Dong Peng

Thomas R Gaffney

Frederick Carl Wilhelm

Bernard A Toseland

Laura M Matz

Seiji Inaoka

Rajiv Krishan Agarwal

Christine Peck Kretz

Paula Jean Battavio

Dean Van-John Roth

Mark Richard Brown

Thomas Mebrahtu

Ryback Li Chang Lo

John Nelson Armor

Brent A Aufdembrink

Edward Chia Kai Tseng

Randy Li-Kai Chang

Hsiu Mei Chen

Ling-Jen Meng

Steven Mitchell Kuznicki

Charles Gardner Coe

Thomas Richard Gaffney

Brent Allen Aufdembrink

Jr William Jack Casteel

A composition and method using same useful for etching a semiconductor substrate comprising: from about 25 to 86% by weight of water; from about 0 to about 60% by weight of a water-miscible organic solvent; from about 1 to about 30% by weight of a base comprising a quartenary ammonium compound; from about 1 to about 50% by weight of an amine compound wherein the amine compound is selected from the group consisting of a secondary amine, a tertiary amine, and mixtures thereof; from about 0 to about 5% by weight of a buffering agent; from about 0 to about 15% by weight of a corrosion inhibitor.

Etching compositions and methods for using same

A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R'NH, wherein R&#x2032; is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer species; optionally, a fluoride ion source; and optionally, a metal chelating agent.

Stripping compositions having high WN/W etching selectivity

It is disclosed a photoresist cleaning composition for stripping a photoresist pattern having a film thickness of 3-150 &#x3bc;m, which contains (a) quaternary ammonium hydroxide (b) a mixture of water-soluble organic solvents (c) at least one corrosion inhibitor and (d) water, and a method for treating a substrate therewith.

Photoresist cleaning composition used in photolithography and a method for treating substrate therewith

A photoresist or semiconductor manufacturing residue stripping and cleaning composition comprising water, one or more alkaline compounds, one or more corrosion inhibitors, and one or more oxidized products of one or more antioxidants, the method of making the composition and the method of using the composition.

Semi-aqueous photoresist or semiconductor manufacturing residue stripping and cleaning composition with improved silicon passivation

Etching compositions and method of using the etching compositions comprising potassium hydroxide; one or more than one additional alkaline compounds selected from the group consisting of TEAH, TMAF and NHOH; and water; or etching compositions comprising one or more than one inorganic alkali basic hydroxides selected from the group consisting of potassium hydroxide, cesium hydroxide, sodium hydroxide, rubidium hydroxide, or lithium hydroxide; optionally one or more than one additional alkaline compounds; water; and optionally one or more corrosion inhibitors; wherein the composition preferentially etches silicon present on a substrate as compared to silicon dioxide present on said substrate.

Etchant solutions and method of use thereof

A solution for semiconductor wafer dicing is disclosed. The solution suppresses the adherence of contamination residues or particles, and reduces or eliminates the corrosion of the exposed metallization areas, during the process of dicing a wafer by sawing. The solution comprises at least one organic acid and/or salt thereof; at least a surfactant and/or at least a base; and deionized water, the composition has a pH is equal or greater than 4. The solution can further comprise, a chelating agent, a defoaming agent, or a dispersing agent.

Method for wafer dicing and composition useful thereof

Suitable additives that may be added into immersion fluids, immersion fluids comprising at least one carrier medium selected from an aqueous fluid, a non-aqueous fluid, and mixtures thereof, and immersions fluids comprising at least one carrier medium and at least one additive useful for performing immersion lithography at an operating wavelength ranging from 140 nm to 365 nm are disclosed herein.

Immersion lithography fluids

A dense cleaning fluid for removing contaminants from a substrate and a method comprising same is disclosed herein. In one embodiment of the present invention, the dense cleaning fluid comprises a dense fluid and at least one acetylenic diol or acetylenic alcohol surfactant.

Processing of substrates with dense fluids comprising acetylenic diols and/or alcohols

Method for removing flux residue and defluxing residue from an article using a dense processing fluid and a dense rinse fluid is disclosed herein. In one embodiment, there is provided a method comprising: introducing the article comprising contaminants into a processing chamber; contacting the article with a dense processing fluid comprising a dense fluid, at least one processing agent, and optionally a cosolvent to provide a partially treated article; and contacting the partially treated article with a dense rinse fluid comprising the dense fluid and optionally the cosolvent to provide a treated article wherein an agitation source is introducing during at least a portion of the first and/or the second contacting step.

Method for removal of flux and other residue in dense fluid systems

Dimethyl ether for methyl group attachment on a carbon adjacent to an electron withdrawing group

The present invention pertains to a process for the coproduction of methanol and dimethyl ether (DME) directly from a synthesis gas in a single step (hereafter, the 'single step DME process'). In this process, the synthesis gas comprising hydrogen and carbon oxides is contacted with a dual catalyst system comprising a physical mixture of a methanol synthesis catalyst and a methanol dehydration catalyst. The present invention is an improvement to this process for providing an active and stable catalyst system. The improvement comprises the use of an aluminum phosphate based catalyst as the methanol dehydration catalyst. Due to its moderate acidity, such a catalyst avoids the coke formation and catalyst interaction problems associated with the conventional dual catalyst systems taught for the single step DME process.

Use of aluminum phosphate as the dehydration catalyst in single step

This invention relates to a process for producing a nonequilibrium distribution of methylamines by the catalyzed reaction of methanol and/or dimethyl ether with ammonia and by the catalytic reforming of a methylamine containing feedstock. One process selectively affords a reaction product enriched in mono and dimethylamines and low in trimethylamine, at high conversion of methanol or dimethylether. A variation of the process effects reforming a methylamine containing feedstock, optionally containing ammonia over a catalyst. The key to achieving this low TMA selectivity at high conversion resides in the use of a microporous zeolite, preferably chabazite, catalyst having a geometric selectivity index (GSI) less about 3, a shape selectivity index (SSI) greater than about 5 and a sorption capacity for 1-PrOH of at least 0.5 mmol/g.

Preparation of methylamines using shape selective chabazites

N-vinyl amides having the general structural formula:

Process for the preparation of n-vinyl amides

Growing community of inventors

Coopersburg, PA, United States of America

Gene Everad Parris