Westinghouse Electric Corporation

Northrop Grumman Systems Corporation

Gene A Digennaro

Franklin B Jones

Charles S Kerfoot

Ronald G Freitag

John W Gipprich

Tapan K Gupta

Cynthia W Berry

Ngon B Nguyen

Mike L Salib

Vincent G Karasack

Joseph A Faulkner

Brian T McMonagle

Benjamin R Myers

Michael J Lee

Thomas M Walsh

Eric D Zirofsky

Harry V Guy, Iii

Eric V Miller

Dave M Krafcsik

Robert B Middleton

Kerron R Duncan

John P Vitamvas

A multi-channel, dual-band, radio frequency (RF) transmit/receive (T/R) module, for an active electronically scanned array, is provided. The module includes a compact, RF manifold connector and at least four T/R channels. Each of the T/R channels includes a notch radiator, a diplexer coupled to the notch radiator, a power amplifier, including at least one dual-band gain stage, coupled to the notch radiator, a low noise amplifier, including at least one lower-band gain stage and at least one upper-band gain stage, coupled to the diplexer, and a T/R cell, including a phase shifter, a signal attenuator and at least one dual-band gain stage, coupled to the power amplifier, the low noise amplifier and the manifold connector.

Dual band quadpack transmit/receive module

In one embodiment, the invention is a packaged high power electronic switch in the form of a semiconductor chip having metalized planar cathode and anode terminals and a gate terminal. A refractory annular ring has planar open end faces and side walls having stepped portions. A pair of thermally and electrically conductive planar substrates is bonded to the opposite end faces of the annular ring and is maintained in spaced relation thereby, forming an enclosed space. At least one conductive strap within the space is supported by the stepped portion of the internal side wall and extends to one of the substrates forming an electrical and thermal path. One of said conductive substrates receives one of the planar terminals of the chip in intimate electrical and thermal contact. The strap is electrically coupled to the other of said terminals, for forming a high current path between the substrates via the strap. Additional components, such as a commutating diode and gate protection zener diode, may be employed and provide a self protected switch assembly.

High power self commutating semiconductor switch

Growing community of inventors

Dundalk, MD, United States of America

Gene A Digennaro