Nuvoton Technology Corporation Japan

Gen Shimizu

Toru Takayama

Katsuya Samonji

Osamu Tomita

Masayuki Ono

Hideo Kitagawa

Daisuke Ikeda

Satoko Kawasaki

In a method for manufacturing a nitride semiconductor light-emitting element by splitting a semiconductor layer stacked substrate including a semiconductor layer stacked body with a plurality of waveguides extending along the Y-axis to fabricate a bar-shaped substrate, and splitting the bar-shaped substrate along a lengthwise split line to fabricate an individual element, the waveguide in the individual element has different widths at one end portion and the other end portion and the center line of the waveguide is located off the center of the individual element along the X-axis, and in the semiconductor layer stacked substrate including a first element forming region and a second element forming region which are adjacent to each other along the X-axis, two lengthwise split lines sandwiching the first element forming region and two lengthwise split lines sandwiching the second element forming region are misaligned along the X-axis.

Nitride semiconductor light-emitting element, method for manufacturing nitride semiconductor light-emitting element, and nitride semiconductor light-emitting device

Growing community of inventors

Toyama, Japan

Gen Shimizu