Average Co-Inventor Count = 3.81
ph-index = 7
The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.
Company Filing History:
1. International Business Machines Corporation (45 from 164,108 patents)
2. Other (2 from 832,680 patents)
3. Samsung Electronics Co., Ltd. (1 from 131,214 patents)
4. Tokyo Electron Limited (1 from 10,295 patents)
5. Globalfoundries Inc. (1 from 5,671 patents)
48 patents:
1. 11011698 - Enhanced coercivity in MTJ devices by contact depth control
2. 10497862 - Enhanced coercivity in MTJ devices by contact depth control
3. 10388857 - Spin torque MRAM fabrication using negative tone lithography and ion beam etching
4. 10256397 - Structure and method to reduce shorting and process degradation in stt-MRAM devices
5. 10243138 - Structure and method to reduce shorting and process degradation in STT-MRAM devices
6. 10170609 - Internal spacer formation from selective oxidation for Fin-first wire-last replacement gate-all-around nanowire FET
7. 10170608 - Internal spacer formation from selective oxidation for fin-first wire-last replacement gate-all-around nanowire FET
8. 10170698 - Spin torque MRAM fabrication using negative tone lithography and ion beam etching
9. 10084127 - Enhanced coercivity in MTJ devices by contact depth control
10. 9960347 - Structure and method to reduce shorting and process degradation in STT-MRAM devices
11. 9954062 - Stacked planar double-gate lamellar field-effect transistor
12. 9954063 - Stacked planar double-gate lamellar field-effect transistor
13. 9947863 - Structure and method to reduce shorting in STT-MRAM device
14. 9859375 - Stacked planar double-gate lamellar field-effect transistor
15. 9853210 - Reduced process degradation of spin torque magnetoresistive random access memory