Asml Netherlands B.v.

Geert Vandenberghe

Richard Johannes Franciscus Van Haren

Jozef Maria Finders

Mircea Dusa

Alexander Hendrikus Martinus Van Der Hoff

Luis Alberto Colina Santamaria Colina

Eric Henri Jan Hendrickx

A mask pattern for imaging a marker structure on a substrate with a lithographic apparatus, the marker structure being configured to determine optical alignment or overlay, includes constituent parts to define the marker structure. The constituent parts include a plurality of segments, each segment having substantially a size of a device feature and a segment shape. The mask pattern includes at least one assist feature located at a critical part of the segment shape. The at least one assist feature has substantially a size below a resolution of the lithographic projection and is configured to counteract optical aberrations or optical limitations generated in the lithographic projection at the critical part.

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Wijgmaal, Belgium

Geert Vandenberghe