U.S. Philips Corporation

Geert J Davids

Jan W Slotboom

Anton P Van Arendonk

Wiegert Wiertsema

Henricus G Maas

Arie Slob

Kazimierz Osinki

Karel E Kuyk

A first charge storage electrode (21) has a first row (21b) of teeth interdigitated with a second row (22b) of teeth of a second charge storage electrode (22). The second storage electrode (22) has a third row (22c) of teeth interdigitated with a fourth row (23b) of teeth of a third charge storage electrode (23). The first and third rows (21b and 22c) overlie one group (11b) of a series of parallel conduction channels while the second and fourth rows (22b and 23b) overlie another group (11a) of the parallel channels. A first charge transfer electrode (24) is provided to transfer charge packets into sites beneath the first storage electrode. Second, third, fourth and fifth charge transfer electrodes (25, 26, 27 and 28) are provided to transfer charge packets between sites beneath, respectively, the first storage electrode (21) and the second row (22b), the first row (21b) and the second storage electrode (22), the second storage electrode (22) and the fourth row (23b), and the third row (22c) and the third storage electrode (23). The first, second and third storage and associated transfer electrodes may form an output stage (20) of a parallel register (C) of a series-parallel-series device to enable de-interlacing of rows of information.

Charge-coupled device

A charge-coupled semiconductor device has a plurality of silicon electrodes for storing and transporting information-carrying charge, which electrodes are located on an insulating layer and are mutually separated by grooves having a width of at most 1 .mu.m. According to the invention, transfer electrodes are arranged in the grooves, these electrodes being coplanar with the remaining electrodes. The thickness of the insulating layer under the transfer electrodes is substantially equal to that under the storage electrodes. The invention also relates to a method of manufacturing a semiconductor device having such an electrode system.

Charge-coupled semiconductor device having an improved electrode

A charge-coupled device has a semiconductor body defining a charge transfer channel. Charge storage and charge transfer electrodes are provided for, respectively, defining charge wells within the charge transfer channel and transferring charge between charge wells. Two clock lines provide clock signals to the charge storage and transfer electrodes for controlling movement of charge between charge wells and to an output connection of the charge transfer channel. Signal processing means in the form of a sense amplifier are provided for processing an output from the charge transfer channel and a conductive path connects the output connection and the signal processing means. The conductive path crosses at least one of the clock lines and a conductive shielding layer extends between and is electrically isolated from the said at least one clock line and the conductive path.

Compact charge-coupled device having a conductive shielding layer

A semiconductor device is set forth comprising a number of parallel first electrodes (1) which are located on an insulating layer and are mutually separated by grooves with insulated walls, in which second electrodes (2) coplanar with the first electrodes (1) are provided. According to the invention, the first electrodes (1) are covered by an insulating layer provided with first contact windows (7), which each overlap at least one second electrode (2). The second electrodes (2) are provided with self-aligned second contact windows (8). Each second electrode (2) exhibits between its second contact window (8) and the first contact windows (7) overlapping the second electrode and also between said first contact windows (7), at least one interruption (9).

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Eindhoven, Netherlands

Geert J Davids