Lam Research Corporation

Yale University

Ge Yuan

Jengyi Yu

Seongjun Heo

Siva Krishnan Kanakasabapathy

Richard Stephan Wise

Samantha SiamHwa Tan

Yang Pan

Samantha S H Tan

Jung Han

Boris Volosskiy

Liu Yang

Samantha Siamhwa Tan

Da Li

Chen-Wei Liang

Yufeng Li

Andrew Liang

A method for cleaning surfaces of a substrate processing chamber includes a) supplying a first gas selected from a group consisting of silicon tetrachloride (SiCl), carbon tetrachloride (CCl), a hydrocarbon (CHwhere x and y are integers) and molecular chlorine (Cl), boron trichloride (BCl), and thionyl chloride (SOCl); b) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; c) extinguishing the plasma and evacuating the substrate processing chamber; d) supplying a second gas including fluorine species; e) striking plasma in the substrate processing chamber to etch the surfaces of the substrate processing chamber; and f) extinguishing the plasma and evacuating the substrate processing chamber.

Removing metal contamination from surfaces of a processing chamber

Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed.

Atomic layer etch and selective deposition process for extreme ultraviolet lithography resist improvement

Edge-emitting laser diodes having high confinement factors and lattice-matched, porous cladding layers are described. The laser diodes may be formed from layers of III-nitride material. A cladding layer may be electrochemically etched to form a porous cladding layer having a high refractive index contrast with an active junction of the device. A transparent conductive oxide layer may be deposited to form a top-side cladding layer with high refractive index contrast and low resistivity.

Method and device concerning III-nitride edge emitting laser diode of high confinement factor with lattice matched cladding layer

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New Haven, CT, United States of America

Ge Yuan