Seagate Technology Incorporated

Ge Yi

Suguo Huo

Robert William Lamberton

William J O'Kane

Susan Jane Tara Murdoch

Thomas K McLaughlin

A magnetoresistive sensor includes first and second magnetic leads and a constricted junction joining the first and second magnetic leads. The first and second magnetic leads are formed of a magnetic and electrically conductive material. The constricted junction includes a junction core formed of magnetic and electrically conductive material. In one embodiment, the constricted junction also includes an ion implanted outer shell portion that at least partially surrounds the junction core and has reduced magnetic and electrical conductivity relative to the junction core. In another embodiment, the junction core has a length that is defined by a distance separating the first and second magnetic leads, and a width that is perpendicular to the length and is substantially less than an average unrestricted magnetic domain wall width corresponding to the magnetic material of the junction core.

Magnetoresistive sensor

A method of making a nano structure smaller than 25 nanometers utilizing atomic layer deposition, planarizing, and etching techniques.

Method to make nano structure below 25 nanometer with high uniformity on large scale

In a method of forming a magnetoresistive sensor, first and second magnetic leads are formed. Next, a junction of magnetic and electrically conductive material is formed between the first and second magnetic leads. Finally, the magnetic and electrical conductivity of an outer shell portion of the junction is reduced to form a constricted junction comprising a magnetic and electrically conductive junction core that is at least partially surrounded by the outer shell portion. Another aspect of the present invention is directed to the magnetoresistive sensor that is formed using the method.

Method of manufacturing a magnetoresistive sensor

A spin polarization enhancement artificial (SPEA) magnet comprises combinations of positive spin asymmetry interfaces and inverse spin asymmetry interfaces arranged antiferromagnetically such that current passed through the SPEA magnet has enhanced spin polarization. The SPEA magnet additionally may combine bulk material properties of electron scattering to either supplement or replace the interfacial spin differentiation. A basic functional unit of the SPEA magnet includes two ferromagnetic layers separated by two spacer layers. Each spacer forms an interface such that adjacent ferromagnetic layers produce different spin symmetry. Antiferromagnetic arrangement of adjacent ferromagnetic layers coordinates the different spin symmetries such that a single spin state is selected and also provides additional stabilization to the SPEA magnet.

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Culmore, Ireland

Ge Yi