Stmicroelectronics(tours) Sas

Université François Rabelais

Universite Francois Rabelais Ufr Sciences Et Techniques

Centre National De La Recherche Scientifique

Stmicroelectronics S.a.

Université´ D'aix-Marseille

Universite De Tours

Insa Centre Val De Loire

Gaël Gautier

Samuel Menard

Yannick Hague

Sébastien Desplobain

Wilfried Vervisch

Damien Valente

A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.

Vertical power component

A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second conductivity type; and on the side of an upper surface of the substrate supporting a conduction electrode and a gate electrode, an upper region of the second conductivity type, wherein the component periphery includes, on the lower surface side, a porous silicon insulating ring penetrating into the substrate down to a depth greater than that of the lower layer.

High-voltage vertical power component

A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.

Growing community of inventors

Veretz, France

Gaël Gautier