Centre National De La Recherche Scientifique

Université Grenoble Alpes

Université Joseph Fourier

Institut Polytechnique De Grenoble

Gauthier Chicot

Julien Pernot

Florin Udrea

Nicolas Rouger

Pierre Muret

Toan Thanh Pham

David Eon

Aurélien Marechal

Etienne Gheeraert

The invention relates to a deep depletion MIS transistor (), comprising: a source region (S) and a drain region (D) made of doped semiconductor diamond of a first conductivity type; a channel region (C) made of doped semiconductor diamond of the first conductivity type, arranged between the source region and the drain region; a drift region (DR) made of doped semiconductor diamond of the first conductivity type, arranged between the channel region and the drain region; and a conductive gate () arranged on the channel region and separated from the channel region by a dielectric layer ().

Diamond MIS transistor

The invention relates to a method for producing a component comprising a conductive grid insulated from a semiconductor monocrystalline diamond substrate by an insulating region, comprising the following steps: a) oxygenating the surface of the substrate so as to replace the hydrogen surface terminations of the substrate with oxygen surface terminations; and b) forming the insulating region on the surface of the substrate by repeated monatomic layer deposition.

Method for producing a MOS stack on a diamond substrate

Growing community of inventors

Grenoble, France

Gauthier Chicot