Imec Vzw

Katholieke Universiteit Leuven

Gauri Karve

Yunlong Li

Xavier Rottenberg

Luc Haspeslagh

Kristof Lodewijks

Deniz Sabuncuoglu Tezcan

Pawel Malinowski

Philippe Soussan

Vladimir Pejovic

Deniz Sabuncuoglu

Deniz Sabuncuogly Teczan

A light sensor for spectrally resolved light detection, said light sensor comprises: an upper reflective element; a lower reflective element; a photo-sensitive element therebetween; a spacer element, configured to form the lower reflective element or arranged between the upper and the lower reflective element; wherein the elements form a stack of layers which define a resonance structure between the upper and the lower reflective element for providing a resonance of light; wherein the spacer element comprises at least two different materials, a distribution of which is different between different pixels in an array of pixels such that a resonance wavelength is different for different pixels; and wherein for a plurality of pixels, geometrical structures smaller than the resonance wavelength are defined by the at least two different materials.

Light sensor and a method for manufacturing a light sensor

According to a preferred embodiment of the method of the invention, an assembly is produced comprising a temporary wafer and one or more tiles that are removably attached to the temporary wafer, preferably through a temporary adhesive layer. The tiles comprise a carrier portion and an active material portion. The active material portion is attached to the temporary carrier. The assembly further comprises a single continuous layer of the first material surrounding each of the one or more tiles. Then the back side of the carrier portions of the tiles and of the continuous layer of the first material are simultaneously planarized, and the planarized back sides of the tiles and of the continuous layer of the first material are bonded to a permanent carrier wafer, after which the temporary carrier wafer is removed. The method results in a hybrid wafer comprising a planar top layer formed of the material of the continuous layer with one or more islands embedded therein, the top layer of the islands being formed by the top layer of the active material portion of the one or more tiles.

Method of producing hybrid semiconductor wafer

Growing community of inventors

Tervuren, Belgium

Gauri Karve