Intel Corporation

Tahoe Research, Ltd.

Gaurav Thareja

Anand S Murthy

Glenn A Glass

Tahir Ghani

Daniel Bourne Aubertine

Stephen M Cea

Christopher P Auth

Szuya S Liao

Vyom Sharma

Rohan K Bambery

Daniel B Aubertine

Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.

Self-aligned 3-D epitaxial structures for MOS device fabrication

An embodiment includes a system comprising: a first gate and a first contact that correspond to a transistor and are on a first fin; a second gate and a second contact that correspond to a transistor and are on a second fin; an interlayer dielectric (ILD) collinear with and between the first and second contacts; wherein (a) the first and second gates are collinear and the first and second contacts are collinear; (b) the ILD includes a recess that comprises a cap layer including at least one of an oxide and a nitride. Other embodiments are described herein.

Confined and scalable helmet

Embodiments of the present disclosure provide techniques and configurations associated with conversion of thin transistor elements from silicon (Si) to silicon germanium (SiGe). In one embodiment, a method includes providing a semiconductor substrate having a channel body of a transistor device disposed on the semiconductor substrate, the channel body comprising silicon, forming a cladding layer comprising germanium on the channel body, and annealing the channel body to cause the germanium to diffuse into the channel body. Other embodiments may be described and/or claimed.

Conversion of thin transistor elements from silicon to silicon germanium

Growing community of inventors

Hillsboro, OR, United States of America

Gaurav Thareja