Fed Corporation

Emagin Corporation

Mcnc

Microelectronics Center of North Carolina

Other

Duke University

Gary W Jones

Steven M Zimmerman

Amalkumar P Ghosh

Webster E Howard

Susan K Schwartz Jones

Jeffrey A Silvernail

Susan K Jones

Ching-Tzong Sune

Yachin Liu

Michael J Costa

Arnold Reisman

Munisamy Anandan

Chen-Jean Chou

Eugene De Juan, Jr

Jong Myoung Kim

Jeffrey R Marino

Richard A Campos

Joseph K Ho

Jon Van Winkle

R Mark Boysel

Stewart Lloyd

The present invention relates to OLED devices having anodes with improved stability and longer lifetime. In particular, the present invention relates to OLEDs comprising an anode having improved stability and longer lifetime wherein the anode comprises a semi-transparent single layer comprising molybdenum.

Organic light emitting diode devices with improved anode stability

A chalk collector is provided which can be easily affixed to a conventional wheel type chalk line assembly. The collector includes a fine passageway which gathers excess chalk as the chalk line is withdrawn from the housing. Apertures or conduits are provided for returning the chalk to the chalk line assembly housing for reuse.

Chalk collector and method

The light emitting device comprises a plurality of stacked organic light emitting devices. The plurality of organic light emitting devices are arranged in a stack. The light emitting device further includes a controller for controlling operation of each of the plurality of organic light emitting devices in the stack. The controller supplies the same current to each of the organic light emitting devices in the stack. The controller simultaneously supplies the same current to each of the plurality of the organic light emitting devices.

Serially-connected organic light emitting diode stack having conductors sandwiching each light emitting layer

A field emitter device including an insulator structure provided on an upper gate line layer of the device. The insulator structure may surround groups of emitters arranged on adjacent gate lines, groups of emitters arranged on the same gate lines, and/or entire regions of a larger array of field emitters. The insulator structure may reduce the occurrence of flashovers to and from the gate lines and emitters when the field emitter device is used in a display. The insulator structure may also enhance the focus of electrons emitted by the field emitter device on the display screen. Focus may be further enhanced by the addition of a resistive coating on the insulator structure. Methods of making the insulator structure and resistive coating are also disclosed.

Flashover control structure for field emitter displays and method of making thereof

A structure to reduce the likelihood of flashover in a parallel plate electron beam array is disclosed. The structure may comprise a spacer structure between the parallel plates along the outer perimeter of the plates. The spacer structure may include a conductive member. The conductive member may shunt anode to cathode flashovers to a sink outside of the array before they reach the cathode. The conductive member may be provided by a conductive frit made of a metal/glass mixture, a metal foil, or a metal coating that extends through or next to the spacer structure.

Field emission display spacer with guard electrode

A sealing structure for an organic light emitting device display. The sealing structure comprises a metal film overlying a dielectric film. The sealing structure has low moisture and oxygen permeability. At least one of the metal layers may react with moisture or oxygen to seal off pin holes. A net low stress sealing structure may be formed by combining tensile and compressive films. The sealing structure may be etched to create openings for connection to outside circuitry. The innovative sealing structure minimizes moisture leakage and vertical shorts between diode cathode and anode.

Sealing structure for organic light emitting devices

A structure to reduce the likelihood of flashover in a parallel plate electron beam array is disclosed. The structure may comprise a means for generating a low intensity electric field in the vicinity of a spacer separating the parallel plates of the array, and the anode. The presence of the electric field in the vicinity of the spacer is not conducive to the occurrence of a surface supported flashover on the gates and emitters. The electric field means may be provided by a conductive coating on one or more surfaces of the spacer. Alternatively, the electric field means may be provided by a conductive coating on a guard ring located within the array in the vicinity of the spacer. Methods of making the structure are also disclosed.

Method and apparatus for flashover control, including a high voltage spacer for parallel plate electron beam array devices and method of making thereof

An interferometric lithographic apparatus includes an arrangement for applying interfering laser beams to a part for producing a first interference pattern. The first interference pattern has a first fringe spacing. A mobile part holder stage is repositioned to change the interference pattern and produce a second fringe spacing. A control arrangement, automatically responsive to the repositioning of the part holder, re-aligns optical paths and optimally interferes the laser beams to produce the second fringe spacing.

Laser interferometric lithographic system providing automatic change of

A high performance novel electron emitter material for use in field emission devices is disclosed. The high performance electron emitter material of the invention may comprise a high Cr and SiO mixture. This material may be formed into high aspect ratio, low work function tips which maintain their shape, thus minimizing flash over risks and electron scattering problems, while at the same time permitting a high level of fabrication process flexibility, and minimizing film stresses. One or more impurities which are conductive oxides or will form conductive oxides may be added to the Cr--SiO composition so that a net low work function emitter may be maintained under oxidation. A class of semi-conductive and conductive metal oxides comprises another embodiment of the invention. These materials include oxides of Cr, Mo, Ni, Fe, and Sc, which have current emitting properties desirable for applications where improved electron emission infirmity is desired among emitters within a pixel. Emission from these more resistive emitter tip materials may be optionally enhanced with the addition of low work function impurities such as alkali metals enabling more stable devices while still permitting low turn-on voltages. Methods of making the emitter are also disclosed.

High performance field emitter and method of producing the same

A high aspect ratio gated emitter structure and a method of making the structure are disclosed. Emitters may be provided in a densely packed array on a support. Two distinct layers of insulator material may surround the emitters. The lower layer of insulator material may be a non-conformally applied spray-on or spin-on insulator. The non-conformal insulator material may pool at the base regions of the emitters so that the tip regions of the emitters extend out of the lower layer of insulator material. The upper layer of insulator material is applied to the lower layer using a conformal process so that the tip regions of the emitters are covered by the upper layer of insulator material. Gate material is applied to the upper layer of insulator material. Holes are provided in the gate material over the tip regions and wells are provided in the upper layer of insulator material surrounding the tip regions. An etch resistant layer may optionally be provided between the upper layer of insulator material and the gate material.

High aspect ratio gated emitter structure, and method of making

The present invention is directed to an organic light emitting device having a substrate, and at least one conductor formed on the substrate. A first insulator layer is formed on the at least one conductor and the substrate. The insulator layer includes at least one pixel opening formed therein defining a pixel area. A second insulator layer is formed on the first insulator layer. The organic light emitting device also include an OLED layer formed on the at least one conductor in the pixel area. The organic light emitting device may further include a sealing structure formed over the OLED layer. The sealing structure includes at least one material formed over the OLED layer. The first insulator layer and the sealing structure form a protective barrier around the OLED layer. The first insulator layer includes a uniformly sloping surface surrounding the pixel area. The OLED layer preferably extends over the uniformly sloping surface. The organic light emitting may further include at least one OLED connector pad formed on the substrate. Methods of forming the pixel area and the organic light emitting devices are also disclosed.

Passive matrix OLED display

Isolation structures and means for isolating the electron injectors in an organic light emitting device are disclosed. The isolation structures may reduce the likelihood of electrical shorts or cross-talks between adjacent columns of electron injector material. The isolation structures may comprise multiple layers of distinct material, including a layer of organic insulation material, such as photoresist or other hydrophobic organic material. The insulation material may be spin or extrusion coated onto the device. The insulation material may be sandwiched between inorganic oxide layers. The insulation material may be selected such that it is capable of being preferentially etched relative to the oxide layers by dry etching methods such as oxygen plasma. Alternatively, the insulation material may be made of material that does not have a very strong adhesion to an underlying oxide layer, so that the insulation material and any conductive material formed on top of it may be removed using a tape lift-off process. Methods for making the aforementioned isolation structures are also disclosed.

Organic light emitting device structure and process

A mask structure may be formed on a field emitter substrate for use in forming emitter wells on and in the substrate. The mask structure may be formed from a multilayered structure on the surface of the substrate using a laser lithography process. From the substrate up, the multilayered structure may include an antireflective coating, a photoresistive layer, an optional etch resistant layer between the antireflective coating and the photoresistive layer, and an optional second antireflective coating between the optional etch resistant layer and the photoresistive layer. The pattern of the mask structure may be transferred to the multilayer structure by exposing the photoresistive layer to laser light. The antireflective coatings may reduce the amount of stray laser light that reflects off the substrate and onto the back of the photoresistive layer. Development of the photoresistive layer following exposure to laser light may be monitored and selectively arrested to form a mask structure with a selective pitch. The antireflective coating may be etched optionally so that it is undercut beneath the overlying etch resistant layer or photoresistive layer to aid in the formation of emitters using a veil field emitter process or an etched gate process.

Lithographic structure and method for making field emitters

The present invention is directed to an electrode structure for an organic light-emitting device display. The electrode structure includes a transparent electrode and a high conductivity rib. The structure provides top side light output and a low line resistance, and enables a high resolution display. The structure permits a display to be built on top of a silicon driver chip for active matrix addressing.

Growing community of inventors

Lagrangeville, NY, United States of America

Gary W Jones