Kla Corporation

Kla Tencor Corporation

Carl Zeiss Smt Gmbh

Gary V Lopez Lopez

Gildardo Rios Delgado

Frances Hill

Katerina Ioakeimidi

Rudy Flores Garcia

Zefram Marks

Michael Romero

John Savee

Evgeniia Butaeva

Miguel Gonzalez

Vera (Guorong) Zhuang

Alan D Brodie

Matthew Derstine

Grace H Chen

Boris Potapkin

Inna M Iskandarova

Andrey Knizhnik

Sergei Belousov

Mike Romero

Felix Lange

Larissa Walter

An optical system includes a bulk material including a fluorine (F)-containing optical material. The bulk material is exposed to an environment at a pressure ranging from atmospheric to vacuum when the bulk material is under extreme ultra-violet (EUV), vacuum ultra-violet (VUV), deep ultra-violet (DUV) and/or UV radiation. The environment includes at least one type of gas or vapor. The at least one type of gas or vapor includes polar molecules.

Protection of optical materials of optical components from radiation degradation

A material recovery system for an optical component includes a reservoir containing gas and configured to supply a gas flow containing the gas. The material recovery system also includes an ion beam generator disposed on the reservoir and configured to receive the gas flow and to ionize the gas in the gas flow to generate an ion beam. The ion beam is configured to be directed to the optical component to remove at least a portion of a F-containing optical material degraded by exposure to VUV radiation, DUV radiation, and/or photo-contamination.

Material recovery systems for optical components

A photocathode emitter can include a transparent substrate, a photocathode layer, and a plasmonic structure array disposed between the transparent substrate and the photocathode layer. The plasmonic structure can serve as a spot-confining structure and an electrical underlayer for biasing the photocathode. The plasmonic structure can confine the incident light at subwavelength sizes.

Plasmonic photocathode emitters at ultraviolet and visible wavelengths

A photocathode emitter includes a transparent substrate, a photocathode layer, and a plasmonic structure array disposed between the transparent substrate and the photocathode layer. The plasmonic structure array is configured to operate at a wavelength from 193 nm to 430 nm. The plasmonic structure array can be made of aluminum. An electron beam can be generated from a light beam directed at the plasmonic structure array of the photocathode emitter.

Plasmonic photocathode emitters

A high-brightness electron beam source is disclosed. The electron beam source may include a broadband illumination source configured to generate broadband illumination. A tunable spectral filter may be configured to filter the broadband illumination to provide filtered illumination having an excitation spectrum. The electron beam source may further include a photocathode configured to emit one or more electron beams in response to the filtered illumination, wherein emission from the photocathode is adjustable based on the excitation spectrum of the filtered illumination from the tunable spectral filter.

System and method for photocathode illumination inspection

The system includes a photocathode electron source, diffractive optical element, and a microlens array to focus the beamlets. A source directs a radiation beam to the diffractive optical element, which produces a beamlet array to be used in combination with a photocathode surface to generate an array of electron beams from the beamlets.

Photocathode emitter system that generates multiple electron beams

A photocathode structure, which can include one or more of CsTe, CsKTe, CsI, CsBr, GaAs, GaN, InSb, CsKSb, or a metal, has a protective film on an exterior surface. The protective film includes one or more of ruthenium, nickel, platinum, chromium, copper, gold, silver, aluminum, or an alloy thereof. The protective film can have a thickness from 1 nm to 10 nm. The photocathode structure can be used in an electron beam tool like a scanning electron microscope.

Metal encapsulated photocathode electron emitter

An emitter with a diameter of 100 nm or less is used with a protective cap layer and a diffusion barrier between the emitter and the protective cap layer. The protective cap layer is disposed on the exterior surface of the emitter. The protective cap layer includes molybdenum or iridium. The emitter can generate an electron beam. The emitter can be pulsed.

Metal protective layer for electron emitters with a diffusion barrier

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Sunnyvale, CA, United States of America

Gary V Lopez Lopez