Honeywell International Inc.

Honeywell G.m.b.h.

Gary R Gardner

Thomas George Stratton

Michael S Liu

James E Riekels

Curtis H Rahn

Bradley J Larsen

Curtis Rhan

Thomas B Lucking

A microelectromechanical device and method of fabricating the same, including a layer of patterned and deposited metal or mechanical-quality, doped polysilicon inserted between the appropriate device element layers, which provides a conductive layer to prevent the microelectromechanical device's output from drifting. The conductive layer may encapsulate of the device's sensing or active elements, or may selectively cover only certain of the device's elements. Further, coupling the metal or mechanical-quality, doped polysilicon to the same voltage source as the device's substrate contact may place the conductive layer at the voltage of the substrate, which may function as a Faraday shield, attracting undesired, migrating ions from interfering with the output of the device.

Microelectromechanical device with integrated conductive shield

An Electrically Erasable Programmable Read Only Memory (EEPROM) memory cell and a method of operation are disclosed for creating an EEPROM memory cell in a standard CMOS process. A single polysilicon layer is used in combination with lightly doped MOS capacitors. The lightly doped capacitors employed in the EEPROM memory cell can be asymmetrical in design. Asymmetrical capacitors reduce area. Further capacitance variation caused by inversion can also be reduced by using multiple control capacitors. In addition, the use of multiple tunneling capacitors provides the benefit of customized tunneling paths.

Single-poly EEPROM cell with lightly doped MOS capacitors

A method for making a voltage linear capacitor for use with a metal oxide semiconductor field transistor wherein a capacitor portion of an SOI substrate is heavily doped with phosphorus. The thin oxide layer used for the transistor gate oxide also serves as the capacitor dielectric and the thickness of the dielectric relative to the gate oxide is controlled.

Method of making linear capacitors for high temperature applications

Growing community of inventors

Golden Valley, MN, United States of America

Gary R Gardner